Method of determining range of exposure dose in mask aligner image quality detection technology
A technology of exposure dose and lithography machine, which is applied in the direction of microlithography exposure equipment, photolithography exposure device, electrical components, etc., which can solve the problems of time-consuming and labor-intensive
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[0058] In order to better understand the present invention, a specific embodiment is now given in conjunction with the accompanying drawings.
[0059] figure 2 This is the basic step of the method for determining the FOCAL exposure dose range proposed by the present invention.
[0060] The lighting conditions of the FOCAL test in this embodiment are: traditional lighting, NA is 0.57, partial coherence factor is 0.7; process conditions are: JSR AR165J photoresist, glue thickness is 1000nm, post-bake temperature is 115°, post-bake time is 60s , Development time is 60s; the above are the parameters required for stage 11. The pattern of the simulated mask is a dense line with a duty ratio of 1:1, and the line width is 250 nm, which is a parameter required for stage 12. According to the relevant parameters of the FOCAL test process, the defocus range of the simulation process is -900nm~900nm, and the defocus step is 120nm, which is the parameter required for stage 13. The minimum dos...
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