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Method for forming bottle type slot

A grooved, bottle-shaped technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of error-prone, long-term, high-cost, etc., to save time, increase capacitor storage, and reduce costs. Effect

Inactive Publication Date: 2007-03-14
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The problem with the above-mentioned conventional process is that when the bottom profile (bottom profile) of the bottle-shaped trench is etched, since this etching process is limited by the size of the surface aperture of the trench and the depth of the trench, only tapered deep trenches can be formed. However, it is impossible to form a deep trench that can expand the surface area of ​​the capacitor storage area; moreover, the steps to be performed are numerous and complicated, and in addition to being prone to errors, it takes a long time and a high cost

Method used

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  • Method for forming bottle type slot
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  • Method for forming bottle type slot

Examples

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no. 1 example

[0021] As shown in Figures 3a-3g, Figures 3a-3g are the first of the method for forming a bottle-shaped groove of the present invention.

[0022] Schematic diagram of the steps of the embodiment.

[0023] As shown in FIG. 3a, first, a semiconductor substrate 301 is provided, and a pad oxide layer 302, a dielectric layer 303, and a hard mask layer 304 are sequentially formed on the semiconductor substrate 301. A patterned photoresist layer (not shown) with an opening is formed on the hard mask layer 304, and the hard mask layer 304 is etched using the patterned photoresist layer as a mask to form an opening on the hard mask layer 304 305, and remove the patterned photoresist layer. The semiconductor substrate 301 is, for example, a silicon substrate; the material of the dielectric layer 303 is, for example, a nitride layer; the material of the hard mask layer 304 is, for example, an insulating layer of borosilicate glass. The material of the hard mask layer 304 can also be a nitrid...

no. 2 example

[0032] 4a-4k are schematic diagrams of the steps of the second embodiment of the method for forming a bottle-shaped groove of the present invention.

[0033] As shown in FIG. 4a, first, a semiconductor substrate 401 is provided, and a pad oxide layer 402, a dielectric layer 403, and a hard mask layer 404 are sequentially formed on the semiconductor substrate 401. A patterned photoresist layer (not shown) with an opening is formed on the hard mask layer 404. Using the patterned photoresist layer as a mask, the hard mask layer 404 is etched to form an opening on the hard mask layer 404 405, and remove the patterned photoresist layer. The semiconductor substrate 401 is, for example, a silicon substrate; the material of the dielectric layer 403 is, for example, a nitride layer; the material of the hard mask layer 404 is, for example, an insulating layer of borosilicate glass.

[0034] As shown in FIG. 4b, using the hard mask layer 404 as a mask, the semiconductor substrate 401, the pa...

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Abstract

First, a groove is formed on a semiconductor substrate provided. A bedding layer and a rigid mask layer are formed on the substrate in sequence. Next, a dielectric layer filling in the groove is formed on the rigid mask layer. Then, the dielectric layer in the groove is etched till certain depth, and a gap wall is formed on sidewall of the gap. Removing the dielectric layer and etching the groove uncovered by the gap wall forms a bottle typed groove. That is the gap wall protects the upper part of the groove. Thus, lower part semiconductor substrate uncovered by the gap wall is etched so as to form bottle typed groove with larger surface area. The invention increases capacitance storage capacity, saves time and lowers cost.

Description

Technical field [0001] The invention relates to a method for manufacturing a trench, in particular to a method for forming a bottle-shaped deep trench for a trench capacitor of a dynamic random access memory (Dynamic Random Access Memory, DRAM). Background technique [0002] As the density of dynamic random access memory continues to increase, memory cells are also moving towards shrinking in size to increase density, and as the DRAM manufacturing process continues to shrink, the aperture size of the deep trench is also limited. . When the aspect ratio of the trench exceeds 35:1, the deep trench as a capacitor storage area will be limited accordingly; in addition, since the capacitance is proportional to the surface area of ​​the capacitor electrode plate, the trench The surface area of ​​the electrode plate of the capacitor is the product of the depth of the groove and the circumferential area of ​​the groove, and the circumferential area of ​​the groove is related to the hole d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8242H10B12/00
Inventor 黄登旺吴昌荣廖建茂何欣戎
Owner NAN YA TECH