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Method for oxidizing a silicon chip at low temperatures and apparatus using the same

A silicon wafer, low-temperature technology, applied in high-quality silicon dioxide layer, low-temperature field, can solve problems such as lack of reactivity and hindering results

Inactive Publication Date: 2007-03-21
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Results are severely hampered by the lack of reactive oxygen radicals

Method used

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  • Method for oxidizing a silicon chip at low temperatures and apparatus using the same
  • Method for oxidizing a silicon chip at low temperatures and apparatus using the same
  • Method for oxidizing a silicon chip at low temperatures and apparatus using the same

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Embodiment Construction

[0027] This application is related to "Method for Low Temperature Oxidation of Silicon," Serial No. 10 / 164,924, filed June 4, 2002.

[0028] Now, the principle of the present invention will be described.

[0029] The technique used in the present invention is to generate a large number of oxygen free radicals on or near the surface of the silicon layer to be oxidized. These radicals are produced by photolysis of O 2 , O 3 , or at any ratio of O 2 and O 3 produced by the mixture. The light source used in the present invention for generating oxygen radicals is a xenon excimer lamp, which effectively emits light at a wavelength of about 172nm, or 7.21eV photon energy, at a power of about 3mW / cm 2 -20mW / cm 2 .

[0030] In oxygen (O 2 ), the bond energy of O-O is 5.2eV, so the photon energy is enough to break the bond and generate a pair of atomic oxygen radicals.

[0031] In ozone (O 3 ), O 2 The bond between -O is much weaker and thus more likely to break. From an ozo...

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Abstract

A method of low-temperature oxidation of a silicon substrate includes placing a silicon wafer in a vacuum chamber; maintaining the silicon wafer at a temperature of between about room temperature and 350 DEG C.; introducing an oxidation gas in the vacuum chamber including introducing an oxidation gas taken from the group of oxidation gases consisting of O2 and O3; dissociating the oxidation gas into radical oxygen with a xenon laser generating light and flowing the radical oxygen over the silicon wafer; and forming an oxide layer on at least a portion of the silicon wafer.

Description

technical field [0001] This invention relates to the fabrication of integrated circuits on silicon, and more particularly to methods and apparatus for providing low temperature, high quality silicon dioxide layers on silicon wafers. Background technique [0002] Traditional techniques for silicon oxidation require high temperatures such as temperatures exceeding 800°C and prolonged exposure to oxidizing atmospheres such as O 2 , N 2 O, or NO. During this oxidation, elemental diffusion occurs within the substrate, and fabrication procedures must be modified to accommodate this diffusion. The ability to perform oxidation at very low temperatures without sacrificing quality would be extremely beneficial to the semiconductor industry. [0003] Thermal oxidation of silicon has different oxidation rates depending on the crystallographic orientation of silicon. Dry O at 900°C 2 Under the atmosphere, a silicon oxide layer of 30nm was grown on the silicon (111) within 1 hour, bu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316H01L21/283C23C14/10
CPCH01L21/3165H01L21/02164H01L21/02255H01L21/02238H01L21/31
Inventor 大野芳睦李宗霑
Owner SHARP KK