MgB2 superconducting material and its preparation method
A superconducting material and preparation technology, applied in the usage of superconducting elements, the manufacture/processing of superconducting devices, superconducting devices, etc., can solve the problems of high cost, poor critical current density, poor inter-grain connection performance, etc. To achieve the effect of strengthening the grain boundary pinning, the preparation method is practical and simple, and the effect of improving the critical current density
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[0010] A kind of MgB of the present invention 2 The preparation method of the superconducting material is characterized in that Mg powder, Me powder and B powder are prepared according to the molar ratio (0.8-0.9): (0.1-0.2): 2 and mixed evenly, (whether compacted, how about the pressure?) , sintering in an argon atmosphere at normal pressure, heat preservation at 600°C-650°C for 1-2 hours, heat preservation at 750°C-800°C for 1-2 hours, heat preservation at 850°C-950°C for 2-4 hours, and prepare the MgB of the present invention 2 superconducting material.
[0011] Using the method of the present invention, Mg powder, Me powder and B powder can be prepared and mixed evenly, and then directly obtained after sintering MgB powder with high critical current density 2 Superconducting block material; in addition, the mixed material is put into a copper tube with Ta as a barrier layer, processed into a 0.3mm×4.0mm strip, and then sintered in an argon atmosphere at normal pressure to...
example 1
[0014] Preparation of MgB Doped with Metal Element Ti 2 blocks. Mg powder, Ti powder and B powder were prepared according to the molar ratio: 0.9:0.1:2 and mixed evenly, and sintered and heat-treated in an atmosphere of atmospheric pressure argon, at 650°C for 1 hour, at 750°C for 1.5 hours, and at 850°C for 2 hours. hours, the preparation of MgB containing doped metal element Ti boride 2 blocks. This MgB 2 The bulk material is at 5K, and its critical current density can reach 2×10 6 A / cm 2 , at 2T, the critical current density can reach 3×10 5 A / cm 2 ; At 20K, its critical current density can reach 1.3×10 6 A / cm 2 , at 2T, the critical current density can reach 9.4X10 4 A / cm 2 .
example 2
[0016] Preparation of MgB Doped with Metal Element Ti 2 Strip. Prepare Mg powder, Ti powder and B powder according to the molar ratio: 0.85:0.15:2 and mix them uniformly, put them into a copper tube with Ta as the barrier layer, process it into a strip of 0.3mm×4.0mm, and place it under normal pressure argon Carry out sintering heat treatment in air atmosphere, keep at 600°C for 1 hour, at 800°C for 1 hour, at 900°C for 2 hours, and prepare MgB containing doped metal element Ti boride 2 Strip. This MgB 2 At 10K, the critical current density of the strip can reach 1.58×10 6 A / cm 2 , at 2T, the critical current density can reach 1.6×10 5 A / cm 2 ; At 20K, its critical current density can reach 9.3×10 5 A / cm 2 , at 2T, the critical current density can reach 4.27×10 4 A / cm 2 .
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