Conductive nitride film, process for producing the same, and antireflection object

A technology of nitride film and conductivity, applied in the direction of non-metallic conductors, conductive layers on insulating carriers, sputtering plating, etc., can solve problems such as pressure changes, prolonged vacuum exhaust time, and reduced conductivity

Inactive Publication Date: 2002-03-13
ASAHI GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the resistivity and other physical properties of the titanium nitride film produced by sputtering are prone to change with the residual gas (mainly H) in the chamber. 2 O) The pressure changes, and the characteristics between batches are prone to differences
[0004] Therefore, there is a problem that in order to remove the residual gas, the vacuum evacuation time must be prolonged, so that the productivity cannot be improved.
[0005] In addition, the resistance of the titanium nitride film tends to change due to heat, and the heat resistance is not enough.
For example, when forming a multilayer conductive antireflection film using a titanium ni

Method used

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  • Conductive nitride film, process for producing the same, and antireflection object

Examples

Experimental program
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Example Embodiment

[0049] Example 1

[0050] The residual air pressure is 1.3×10 -5 Torr (1.73×10 -3 Pa) (about 5×10 -6 Torr (6.65×10 -4 Pa) large, more residual gas), Ar: N 2 = 9:1 (volume ratio) mixed gas (6mm Torr (798mmPa)) atmosphere, the power density is 2.2W / cm 2 Under the conditions of the magnetron DC sputtering method, a Ti target containing 5at% of Pd (except for Ti only containing Pd) was used to form a film on the glass substrate. The resulting nitride film is a titanium nitride film containing 5at% Pd (TiN x : Pd5at% film), the film thickness is 20nm.

[0051] The surface resistance (R s ), resistance difference between batches after 5 batches of film formation, resistance change after heat resistance test (250°C, 30 minutes). The results are shown in Table 1.

Example Embodiment

[0052] Example 2

[0053] A film was formed in the same manner as in Example 1, except that a Ti target containing 5 at% of Ni (except for Ti only containing Ni) was used instead of the target used in Example 1. The resulting nitride film is a titanium nitride film containing Ni5at% (TiN x : Ni5at% film), the film thickness is 20nm. The same measurement as in Example 1 was performed. The results are shown in Table 1.

Example Embodiment

[0054] Example 3

[0055] A film was formed in the same manner as in Example 1, except that a Ti target was used instead of the target used in Example 1. The resulting nitride film is a titanium nitride film (TiN x Film), the film thickness is 20nm. The same measurement as in Example 1 was performed. The results are shown in Table 1.

[0056] It can be seen from Table 1 that with TiN x Compared with the film, the TiN of the present invention x : Pd5at% film and TiN x : The resistance difference between batches of Ni5at% film and the resistance change after heat resistance test are much smaller, and the repeatability and heat resistance are also very good.

[0057] Example

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Abstract

An excellent heat-resistant electroconductive nitride film containing Ti and/or Zr, and at least one metal selected from the group consisting of Al, Mo, Cr, Nb, Hf, Ni, Co, Fe, Pd, Ag, Au and Pt, its production method and an antireflector using the electroconductive nitride film.

Description

technical field [0001] The present invention relates to a conductive nitride film, a method for preparing the same, and an anti-reflector using the conductive nitride film. Background technique [0002] Titanium nitride film has electrical conductivity and appropriate optical absorption, so it can be used as an antistatic film for cathode ray tubes (CRTs) and the like. Titanium nitride film also has heat ray blocking performance, so it can be used as a heat ray protection film for window glass of automobiles and the like. [0003] However, the resistivity and other physical properties of the titanium nitride film produced by sputtering are prone to change with the residual gas (mainly H) in the chamber. 2 O) The pressure changes, and the characteristics between batches are prone to differences. [0004] Therefore, there is a problem that in order to remove the residual gas, the evacuation time must be prolonged, so that the productivity cannot be improved. [0005] ...

Claims

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Application Information

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IPC IPC(8): C23C14/06H01B1/06
CPCH01B1/06C23C14/0641
Inventor 藤野正美佐藤一夫光井彰竹田谕司堀江则俊
Owner ASAHI GLASS CO LTD
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