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Prepn of lanthanum nickelate-conducting metal oxide film material

An oxide film, conductive metal technology, applied in circuits, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problems of impossible growth of ferroelectric thin film materials, unfavorable commercial development, and expensive raw materials , to achieve the effect of convenient operation, stable performance and cost reduction

Inactive Publication Date: 2002-08-07
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

But up to now, although adopting the chemical solution deposition method to prepare the lanthanum nickelate thin film on the Si substrate existing literature report, refer to Appl.Phys.Lett.68 (10), (1996) P1347-1349, but the nickel grown out Lanthanum acid thin film has no preferred orientation, so it is impossible to grow high-quality ferroelectric thin film material on it, and the raw materials used are relatively expensive, which is not conducive to commercial development

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  • Prepn of lanthanum nickelate-conducting metal oxide film material

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Embodiment Construction

[0021] 1. LaNiO 3 Preparation of precursor solution

[0022] Weigh 0.01 mole of nickel acetate into a 100ml flask, add 50ml of acetic acid, and heat at 70°C to dissolve it. Then add the lanthanum nitrate of equimolar amount, at this moment find that dissolving is little, then slowly add 8ml deionized water under 60 ℃ and under constant stirring, until insoluble matter disappears, obtains the green transparent solution. In order to prevent cracking of the obtained lanthanum nickelate film material, 1.6ml formamide (HCONH 2 )additive. Finally, the obtained precursor solution was filtered through a 0.2 μm microporous filter, and its concentration was adjusted to 0.3 M by evaporating part of the solvent.

[0023] 2 Preparation of thin film materials

[0024] The lanthanum nickelate thin film material was prepared by the spin-coating method, and about 0.5ml of the lanthanum nickelate precursor solution was taken with a rubber dropper, and dropped on the rotating substrate at a ...

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Abstract

The preparation method for lanthanum nickelate conductive metal oxide film material includes: preparing precursor solution, mixing solvent acetic acid, deionized water and additive methanamide and solute nickel acetate and lanthanum nitrate at a certain temperature in the concentration of 0.3 M to obtain precursor solution, and preparing film material, making the prepared precursor solution form gel film on the substrate by adopting rotating coating mode, then making heat treatment by sections in quick annealing furnace to form film material. Said film material possesses high selective orinetation and good metal characteristics, and its room temp. electric resistivity is about 7.6X10 to the minus fourth ohm cm. Said film material can be used to prepare high-quality ferroelectric film material on it or can be used as bottom electrode of ferroelectric film device.

Description

technical field [0001] The invention relates to a conductive metal oxide thin film material, in particular to a method for preparing a conductive metal oxide thin film material of lanthanum nickelate Background technique [0002] It has been found that metal oxides with a perovskite structure, such as La 0.5 Sr 0.5 CoO 3 , YBa 2 Cu 3 o 7-δ , and SrRuO 3 etc., to replace metal as the bottom electrode of lead zirconate titanate (PZT) ferroelectric thin film devices, can greatly enhance the fatigue resistance of PZT ferroelectric thin film devices. Recently, another metal oxide with a perovskite structure, lanthanum nickelate (LaNiO 3 ) has attracted great attention and has become one of the materials of choice for the bottom electrode of ferroelectric thin films. This is mainly because LaNiO 3 The unit cell parameter (a=0.384nm) of the ferroelectric film is very close to that of the ferroelectric film, so that it can be used not only as ...

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Application Information

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IPC IPC(8): C04B41/87H01L41/187H01L41/273
Inventor 孟祥建孙璟兰王根水郭少令褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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