Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical reinforcing type positive photoresist composition

A positive photoresist, enhanced technology, applied in optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc., can solve the problem of scum generation

Inactive Publication Date: 2002-08-28
SUMITOMO CHEM CO LTD
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, chemically amplified positive resists using copolymers of 2-ethyl-2-adamantyl methacrylate and hydroxystyrene have a problem of scum formation after development.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical reinforcing type positive photoresist composition
  • Chemical reinforcing type positive photoresist composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] The resin component of the photoresist composition of the present invention basically has two kinds of polymerized units, namely, a polymerized unit derived from hydroxystyrene and a polymerized unit derived from 2-ethyl-2-adamantyl (meth)acrylate . Although the resin component itself is insoluble or hardly soluble in alkali, it is chemically changed by the action of acid to become alkali-soluble. These polymerized units are formed by opening the double bonds in the styrene moiety and the double bonds in the (meth)acrylic acid moiety, specifically represented by the following formulas (I) and (II):

[0009] where R 1 Represents a hydrogen atom or a methyl group, R 2 Indicates ethyl.

[0010] In the hydroxystyrene unit of formula (I), the positional relationship between the hydroxyl group and the vinyl group is not particularly limited, but p-hydroxystyrene is generally used.

[0011] A resin having polymerized units derived from hydroxystyrene and polymerized unit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a chemically enhanced positive photoresist composition with excellent sensitivity and resolution, and demonstrated to be scum-free, comprising polymerized units derived from hydroxystyrene and derived from (methyl styrene) ) The resin of the polymerized unit of 2-ethyl-2-adamantyl acrylate, the resin itself is insoluble or hardly soluble in alkali, but becomes alkali soluble after dissociating the above acid-labile group by the action of acid ; a radiation-sensitive acid generator; and polypropylene glycol.

Description

technical field [0001] The present invention relates to a photoresist composition suitable for lithography, which is acted upon by high-energy rays such as extreme ultraviolet rays (including excimer lasers, etc.), electron beams, X-rays or radiation rays. Background technique [0002] Recently, in accordance with the high integration of integrated circuits, it is required to form submicron patterns. Particular attention is paid to lithography using radiation sources such as excimer lasers from krypton fluoride (KrF), argon fluoride (ArF) and fluorine, electron beams, EUV light, X-rays, etc., because of their ability to form fine pattern. For a photoresist suitable for the lithography method, a so-called chemically amplified type photoresist, which uses an acid catalyst and has a chemically amplified effect, is used. In the chemically amplified photoresist, the acid generated by the acid generator at the radiation-irradiated part diffuses through the subsequent heat treatm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/039
CPCG03F7/0048G03F7/0397Y10S430/106Y10S430/111G03F7/039
Inventor 难波克彦中西润次上谷保则
Owner SUMITOMO CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products