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Compound semiconductor device

A semiconductor and compound technology, applied in the field of compound semiconductor devices, can solve the problems of difficulty and failure in the use of silicon chips in high frequency bands

Inactive Publication Date: 2003-01-29
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, it is difficult to use silicon chips in high-frequency bands. High-priced compound semiconductor chips are used. Silicon semiconductor chips have good performance. As long as there is a possibility of utilization, compound semiconductor chips with high chip prices will of course fail in price competition.

Method used

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  • Compound semiconductor device
  • Compound semiconductor device
  • Compound semiconductor device

Examples

Experimental program
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Embodiment Construction

[0030] Refer to the following Figure 1 to Figure 4 Examples of the present invention will be described.

[0031] figure 1 (A) shows an example of a GaAsFET as the first embodiment of the present invention.

[0032]The GaAsFET is composed of a channel region 12 , a source contact electrode 2 , a drain contact electrode 3 , and a gate contact electrode 4 .

[0033] The channel region 12 is configured as follows. On the non-doped GaAs substrate, a non-doped buffer epitaxial growth layer and an N-type epitaxial growth layer are laminated, and a Schottky contact gate is arranged on the surface. Sources and drains in ohmic contact with the GaAs surface are arranged on both sides. The FET uses the gate potential to form a depletion layer in the channel region directly below, thereby controlling the drain current between the source and drain.

[0034] In this figure, a rectangular region surrounded by a dotted line is a channel region 12 formed in the substrate. The comb-shaped...

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Abstract

A local oscillation FET has a source connecting pad (42), a drain connecting pad (43) and a gate connecting pad (44). The source connecting pad (42) occupies one corner of a substrate, and the drain and gate connecting pads (43, 44) are placed at the neighboring corners so that the three connecting pads form an L shape on the substrate. As a modification to this configuration, another source connecting pad is placed at the remaining corner of the substrate so that the drain and gate connecting pads are shielded from each other by the two source connecting pads. These device configurations contribute to size reduction of the local oscillation FET.

Description

technical field [0001] The present invention relates to a compound semiconductor device used in high-frequency equipment, and more particularly, to a compound semiconductor device in which the chip size is miniaturized and high-frequency characteristics are improved. Background technique [0002] With the expansion of the global mobile phone market and the rising demand for digital satellite broadcasting receivers, the demand for high-frequency equipment is rapidly expanding. Gallium and arsenic (GaAs) field effect transistors (hereinafter referred to as FETs) are increasingly used as components for high-frequency waves, and monolithic microwave integrated circuits (MMICs) that integrate the switching circuits themselves have been promoted. and the development of FETs for local oscillation. [0003] Figure 5 An example of a GaAsFET used for local oscillation is shown. [0004] Such as Figure 5 As shown in (A), the GaAsFET includes a channel region 12 , a source contact e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/338H01L23/482H01L23/485H01L29/417H01L29/423H01L29/78H01L29/812
CPCH01L29/41758H01L2224/0603H01L2924/01082H01L2924/00014H01L2924/01004H01L2924/30105H01L24/06H01L2224/05553H01L2224/05552H01L2224/45117H01L2924/01022H01L2924/19041H01L2924/01028H01L2924/01013H01L2924/30107H01L2924/1423H01L2924/0103H01L29/42312H01L24/45H01L2924/19043H01L2224/85399H01L2224/45155H01L2924/01079H01L2924/14H01L2924/01033H01L2924/01005H01L23/4824H01L2924/01006H01L2924/10329H01L2224/05599H01L2924/01078H01L2924/10253H01L2924/01014H01L2224/45144H01L2924/3025H01L2224/48091H01L2224/4911H01L2924/1306H01L2924/12032H01L2224/45015H01L2924/01032H01L2924/00H01L29/78
Inventor 浅野哲郎上川正博平田耕一榊原干人
Owner SANYO ELECTRIC CO LTD
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