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High-purity aluminium single-layer crystal solidification purifying method

A purification method and single-layer technology, applied in the field of foundry metallurgy, can solve the problems of difficult to understand the specific distribution in detail, unfavorable purity of aluminum ingots, and difficult to control, so as to improve the removal efficiency, reduce the intrusion of oxygen atoms and hydrogen atoms, improve The effect of production efficiency

Inactive Publication Date: 2003-08-27
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the invention has advanced technology and a high degree of automatic control, the system is too complicated, and there are too many factors affecting the purification efficiency, so it is not easy to control
In addition, the distribution of impurities in the purified crystal is affected by control factors, so it is difficult to know the specific distribution of solute elements in the crystal in detail, which is not good for controlling the purity of the entire aluminum ingot

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Example 1 When the growth rate is 5cm / h, the depth of aluminum liquid in the crystallization tank is 5mm, and the temperature gradient is 300k / cm, the solid phase purity of 4N refined aluminum can reach 5N3~5N5 after purification;

Embodiment 2

[0014] Example 2 When the growth rate is 10cm / h, the depth of aluminum liquid in the crystallization tank is 10mm, and the temperature gradient is 200k / cm, the solid phase purity of 4N refined aluminum can reach 5N~5N2 after purification;

Embodiment 3

[0015] Example 3 When the growth rate is 20cm / h, the depth of aluminum liquid in the crystallization tank is 20mm, and the temperature gradient is 100k / cm, the solid phase purity of 4N refined aluminum can reach 4N8-5N1 after purification.

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PUM

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Abstract

The invention is a high purity aluminium single layer crystal concreting purification method. When using deviatoric analysis method to purify aluminium or other metal, the invention uses melting and heat preserving in vacuum, the crystal feature when the purity metal is concreted, in flat crystal platform, through adjusting the aluminium liquid thickness in crystal slot, growth speed and the temperature grads of the front line of solid and liquid interface, controls the crystal to grow into single layer parallel cell crystal, changes the three-dimensional distribution of solute into planar distribution, controls the discharging of impurities.

Description

technical field [0001] The invention relates to a method for purifying high-purity aluminum, in particular to a method for solidifying and purifying a single-layer crystal of high-purity aluminum, which belongs to the field of casting metallurgy. Background technique [0002] It is a mature industrial process to use segregation method to purify metals, especially aluminum, to remove impurity elements. After literature search, it was found that the Chinese patent application number is: 02111339.4, and the name is: vacuum continuum purification method for high-purity aluminum. The applicant is: Shanghai Jiaotong University. layer liquid method. The method uses liquid aluminum as the raw material, and the crystallization is mainly in the form of cylindrical crystal flat interface growth. By strictly controlling the temperature of the heating zone and the cooling zone, controlling the amount and time interval of absorbing the aluminum liquid, and controlling the degree of vacuu...

Claims

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Application Information

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IPC IPC(8): C22B21/06
Inventor 张佼孙宝德何博
Owner SHANGHAI JIAO TONG UNIV
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