Method for forming grid electrode of semiconductor

Abstract

First, a stack architecture including a conductor layer and a topping layer is formed on substrate. Next, a high-density plasma dielectric layer is formed and the topping layer is exposed, and top part of the high-density plasma dielectric layer is higher than the top part of the conductor layer. Then, the topping layer is removed. A concavity part is formed on the conductor layer since the high-density plasma dielectric layer is higher than the top part of the conductor layer. Finally, oxidation gap wall is formed sidewall at concavity part. A conductor layer deposited on substrate and covering the concavity part is connected to original conductor layer so as to form a grid electrode of a semiconductor device.

Description

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AI Technical Summary

Problems solved by technology

[0003] However, the above-mentioned method of forming a semiconductor gate is prone to defects in the interface between the high-density plasma oxide layer and the gate, and there is a risk of penetrating through the substrate when forming a larger upper portion of the gate subsequently, resulting in a single Bit (single bit) failure, thereby affecting its reliability (reliability)

Moreover, when semiconductor de

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