Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for forming distribution structure

A wiring structure and wiring layer technology, which is applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of difficulty in wiring grooves, hindering reactions, and poor wiring groove patterns.

Inactive Publication Date: 2004-09-08
SANYO ELECTRIC CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, before the development process, there will be the following problem: the NH that is performed to restore the surface of Cu constituting the first wiring layer 109 3 NH used in plasma treatment 3 Gas, NH used as a raw material gas when forming the SiCN film 110 3 gas, and nitrogen compound gas such as gas generated by plasma treatment on the surface of SiCN film 110 during SiOC film 111 film formation, from the vicinity of the interface between first wiring layer 109 and SiCN film 110 and SiCN film 110 and SiOC film Near the interface of 111, release to the photoresist film 113
The problem is: this nitrogen compound gas will hinder the reaction of the photoresist in the exposure of the photoresist film 113 and the PEB process.
In this case, as Figure 33 As shown, there is a problem of poor pattern of the wiring trench on the photoresist film 115.
produced as Figure 33 The wiring duct pattern shown is not good, and it will be difficult to form the wiring duct according to the designed size

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming distribution structure
  • Method for forming distribution structure
  • Method for forming distribution structure

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0055] refer to Figure 1 to Figure 9 , the method of forming the wiring structure of the first embodiment will be described.

[0056] First, if figure 1As shown, a gate electrode 5 is formed on a predetermined region of a semiconductor substrate 1 via a gate insulating film 4 . Using the gate electrode 5 as a mask, impurity ions are implanted on the semiconductor substrate 1 to form two source / drain regions 2 and 3 . Furthermore, an interlayer insulating film 6 having a contact hole 6a reaching the upper surface of the gate electrode 5 is formed to cover the entire surface. Plug electrodes 7 made of W or Cu are formed in the contact holes 6a. In addition, an insulating film 8 having a wiring groove 8a reaching the plug electrode 7 is formed to cover the entire surface. Then, after the wiring trench 8a is filled with copper, excess copper deposits are removed by CMP, whereby the first wiring layer 9 made of Cu buried in the wiring trench 8a is formed.

[0057] In order t...

no. 2 approach

[0072] refer to Figure 10 , in the formation process of the second embodiment, unlike the above-mentioned first embodiment, the case where the gas permeation suppressing film is finally removed will be described. Using the CMP method

[0073] Specifically, in Figure 9 In the manufacturing process of the first embodiment shown, according to the second embodiment, the excess deposition part of the TaN film that becomes the barrier layer 17 and the second wiring 18 and The excessively deposited part of the metal film whose Cu is the main component of the connection wiring 19 is polished by the CMP method. At this time, the gas permeation suppressing film 12 is removed by the overpolishing process, and thus, the obtained Figure 10 structure shown. Other forming processes of the second embodiment are the same as those of the first embodiment described above.

[0074] In the second embodiment, as described above, the excess deposited portion of the TaN film serving as the bar...

no. 3 approach

[0077] refer to Figure 11 , in the formation process of the third embodiment, different from the above-mentioned first embodiment, between the SiCN film 10 and the SiOC film 11, a TEOS-SiO 2 The gas permeation suppression film 22 constituted by the film.

[0078] Specifically, in the third embodiment, the SiCN film 10 is sequentially formed of TEOS-SiO 2 After the gas made of the film permeates the suppression film 22, the SiOC film 11, and the organic antireflection film 13, a photoresist film 14 having a pattern of via holes is formed on a predetermined region of the organic antireflection film 13. Using this photoresist film 14, the organic antireflection film 13, the SiOC film 11, and the gas permeation suppression film 22 are dry-etched by dry etching with a CF-based gas to form the via hole 20a. Other forming processes of the third embodiment are the same as those of the above-mentioned first embodiment.

[0079] In the third embodiment, as described above, when the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of forming a wiring structure capable of inhibiting a photoresist film for forming an opening from a pattern failure resulting from nitrogen compound gas is obtained. This method of forming a wiring structure comprises steps of forming a first insulator film and a gas permeation suppressive film for suppressing permeation of gas containing nitrogen on a first wiring layer, forming a first opening through the first insulator film and the gas permeation suppressive film, performing at least either heat treatment or retention under a vacuum after forming the first opening, and thereafter forming a second opening through at least the first insulator film.

Description

technical field [0001] The present invention relates to a method of forming a wiring structure, and more particularly to a method of forming a wiring structure having an opening such as a contact hole (via hole) or a wiring trench. Background technique [0002] In recent years, along with miniaturization in terms of design rules of semiconductor integrated circuits, the width of wirings has been reduced, and at the same time, the intervals between wirings have also been reduced. As the wiring width becomes smaller, the wiring resistance increases; at the same time, as the wiring spacing becomes smaller, the capacitance between the wirings increases. Due to such an increase in wiring resistance and an increase in the capacitance between wirings, the problem of wiring delay becomes significant. [0003] Therefore, currently, in order to reduce the wiring resistance, Al wiring is being transitioned to Cu wiring with lower resistance. As a method of forming Cu wiring, a dual d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L21/20H01L21/768
CPCH01L21/76828H01L21/76808H01L21/76801H01L21/76838
Inventor 宍田佳谦渡边裕之
Owner SANYO ELECTRIC CO LTD