Semiconductor device, 3-D mounted semiconductor device mfg. method, circuitboard and electronic apparatus
A three-dimensional installation and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of complicated etching process and changing etching conditions, and achieve simplified process, efficient manufacturing and low cost. Reduced effect
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no. 1 Embodiment approach
[0037] figure 1It is a schematic partial cross-sectional view showing the main part of the semiconductor device (three-dimensional mounting type semiconductor device) of the first embodiment. The interlayer insulating film 14 is formed by laminating the semiconductor device main body 1 with electrode pads 16 on the silicon substrate 10 .
[0038] Each semiconductor device main body 1 stacks an insulating film 12 with a thickness of about 4000 Å, an interlayer insulating film 14 with a thickness of about 10000 Å, and an electrode pad 16 with a thickness of about 8000 Å on a silicon substrate 10, and has a silicon substrate penetrating through these silicon substrates along the stacking direction. The through-holes 11 of the substrate 10 , the insulating film 12 , the interlayer insulating film 14 , and the electrode pad 16 have a connection terminal 24 made of a conductive member inserted into the through-hole 11 . In addition, a passivation film 18 having a larger diameter th...
no. 2 Embodiment approach
[0080] Next, a second embodiment of the semiconductor device of the present invention will be described. Figure 7 It is a partial cross-sectional schematic view showing the main part of the semiconductor device of the second embodiment, and is the same as that of the first embodiment. figure 1 Quite a graph. The semiconductor device 200 of the second embodiment is a device in which the semiconductor device main body 1 composed of electrode pads 16 is laminated on a silicon substrate 10 via an insulating film 12 and an interlayer insulating film 14 in multiple layers. The major difference is that the through hole 11 penetrating the silicon substrate 10 , the insulating film 12 , the interlayer insulating film 14 , and the electrode pad 16 is formed at the same plane height. Therefore, for members of the same configuration, the grant and the figure 1 The same symbols are used and explanations are omitted.
[0081] Each semiconductor device main body 2 is provided with a thro...
no. 3 Embodiment approach
[0086] Figure 9 It is a perspective view showing the schematic structure of one embodiment of the circuit board of this invention. Such as Figure 9 As shown, the circuit board 102 of this embodiment has a structure in which the above-mentioned semiconductor device 100 ( 200 , 300 ) is mounted on the substrate 101 . For the substrate 101 , for example, an organic substrate such as a glass epoxy substrate is generally used. Wiring patterns made of, for example, copper are formed into desired circuits on the substrate 101, and these wiring patterns are mechanically connected to the wiring patterns of the semiconductor device 100, or are electrically connected by the aforementioned anisotropic conductive film.
[0087] In addition, as an electronic device having a circuit board including a semiconductor device according to the present embodiment, Figure 10 A notebook personal computer 201 is shown in . Figure 9 The circuit board shown in is placed inside the casing of each...
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