Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Double silver low-emissivity coated glass based on composite dielectric layer

A low-emissivity coating and dielectric layer technology, applied in sputtering, coating, ion implantation, etc., can solve the problem of uncoated glass, etc., to achieve improved sunshade performance, high transmittance, radiation rate reduction effect

Active Publication Date: 2005-01-26
SHANGHAI YAOHUA PILKINGTON GLASS GROUP +1
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] There are many kinds of low-E coated glass with multi-layer coating on the market, but there is no coated glass coated with double-layer silver with high visible light transmission

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double silver low-emissivity coated glass based on composite dielectric layer
  • Double silver low-emissivity coated glass based on composite dielectric layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The flat glass double-end continuous coating machine used in the present invention includes 11 AC cathodes and 10 DC cathodes, adopts the process parameters listed in the following table, uses 6 AC double targets, and 4 DC single targets, with a total of 10 target positions Carry out production, make double-silver low-emissivity glass of the present invention, its process parameter and the position list of target are as follows:

[0023] Target

serial number

cathode

Types of

target material

sputtering process

barometric pressure

(hPa)

process gas

Element

film layer

thickness

(nm)

1#

AC double target

tin

3.95×10 -3

Oxygen: Argon

=45:55

17

2#

AC double target

tin

3.25×10 -3

Oxygen: Argon

=45:55

18

3#

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The device disclosed by the invention comprises (from glass substrate outward) glass / dielectric layer / silver layer / protection layer / composite dielectric layer / silver layer / protection layer / dielectric layer, wherein the dielectric layer being SnO2, sputtered in oxygen-argon atmosphere through the tin target of the AC cathode, the silver layer being Ag, sputtered in argon atmosphere through the DC flat target, the protection layer being NiCr, sputtering nickel-chromium alloy in argon atmosphere through the DC flat target.

Description

technical field [0001] The invention is a kind of low radiation coated glass coated with double silver layer and compound dielectric layer. Background technique [0002] There are many kinds of low-emissivity coated glass with multi-layer coating on the market, but there is no coated glass coated with double-layer silver with high visible light transmission. Contents of the invention [0003] A multi-layer film layer is plated on the glass substrate. The film structure of each layer, from the glass substrate to the outside, is as follows: [0004] Glass / dielectric layer (1) / silver layer (1) / protective layer (1) / composite dielectric layer (1) / silver layer (2) / protective layer (2) / dielectric layer (2); [0005] Among them: the dielectric layer (1) is SnO 2 ; [0006] The silver layers (1), (2) are Ag; [0007] The protective layers (1), (2) are NiCr; [0008] The composite dielectric layer (1) is TiO x / SnO 2 / TiO x structure; [0009] The dielectric layer (2) is Si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C03C17/23C23C14/34
Inventor 安吉申王茂良潘浩军吴斌胡韶然张建军李志军张雷方志坚陈海嵘
Owner SHANGHAI YAOHUA PILKINGTON GLASS GROUP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products