Electrostatic discharge protection circuit

Abstract

The invention is a field effect transistor static discharge (ESD) protection circuit with drain electrode silicide-less isolating block. The circuit is connected to an internal circuit electrically in order to protect the internal circuit from being affected by static discharge; the internal circuit includes at least a signal input end. The static discharge protection circuit contains: a static discharge clamp circuit (ESD clamp circuit, which is used to provide a current grounding path of the static discharge; and at least a pair of PN surface type diode (PN junction diode) and stacked single-face junction diode, the P end and the N end of another junction are connected to the signal input end electrically. The drain electrode of at least one field effect transistor in the clamp circuit is non-silicide block type.

Description

technical field [0001] The present invention provides an electrostatic discharge (electro static discharge, ESD) protection circuit, especially an electrostatic discharge protection circuit for a metal oxide semiconductor field effect transistor (MOSFET) provided with a drain non-silicide isolation block. Background technique [0002] Electro Static Discharge (ESD) is the main factor that causes most electronic components or electronic systems to be damaged by electrical overstress (Electrical Overstress, EOS). Electrostatic discharge can cause permanent damage to semiconductor components and computer systems, thus affecting the circuit function of integrated circuits and making electronic products work abnormally. The generation of electrostatic discharge is mostly caused by human factors. However, it is difficult to avoid the electrostatic discharge caused by human factors. The reason is that electronic components or systems are manufactured, produced, assembled, tested, s...

AI Technical Summary

Problems solved by technology

When the drain of the MOS component has a silicide isolation block, it can indeed improve the resistance to electrostatic discharge, but the equivalent input resistance value that rises will affect the application of this MOS component in the high-frequency field

In addition, the area occupied by such MOS components is also larger than that occupied by MOS components without silicide spacers in the general process, which will relatively reduce the number of MOS components on a single wafer.

[0015] Therefore, it can be seen from the above that the ESD protection circuit in the prior art obviously has inconvenience and deficiency in actual use, and can be improved.

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