Producing method and structure for dynamic random access storage

Abstract

The present invention discloses the manufacture process and structure of DRAM with trench type capacitor. The DRAM manufacturing process includes forming a doped area with the same doping status with the substrate in the channel area part adjacent to the isolating area, and the doped area is formed through inclined ion implantation. The step of the inclined ion implantation is after forming capacitor trench and before defining active area. The doped area passes through the upper section of capacitor trench adjacent to the channel area and is implanted into the substrate in self-aligning mode.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to a dynamic random access memory manufacturing method. Background technique [0002] Dynamic Random Access Memory (DRAM) is a volatile memory used to store frequently accessed data in a computer. A typical DRAM cell is composed of a MOS transistor and a capacitor, wherein two sources / drains of the transistor are electrically connected to the capacitor and the bit line respectively. There are mainly two types of capacitors used in the current DRAM, one is a stacked capacitor that is higher than the transistor, and the other is a trench capacitor that is lower than the transistor. [0003] In a DRAM using a trench capacitor, in order to reduce the sub-threshold current of the transistor and increase the data storage capacity of the storage electrode, the initial voltage is often increased to adjust the ion implantation (V T implantation) and / or pocket ion implantation (pocke...

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Problems solved by technology

However, this method will increase the electric field gradient of the PN junction, resulting in an increase in the junction leakage current, so the total leakage cannot be effectively reduced

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