Semiconductor laser device and method of manufacturing the same

Abstract

The purpose of the present invention is to provide a semiconductor laser element with a small threshold current and easy fabrication, good temperature characteristics and high-speed response characteristics, which has an n-type GaAs substrate (101), an n-type GaAs substrate (101) The n-type AlGaInP cladding layer (102), the non-doped quantum well active layer (103), the p-type AlGaInP first cladding layer (104), the p-type GaInP corrosion stop layer (105), and the p-type AlGaInP second 2 cladding layer (106), p-type GaInP cladding layer (107), p-type GaAs contact layer (108) and n-type AlInP barrier layer (109), with ridges and protrusions on both sides of the ridges, p-type GaAs The contact layer (108) is formed only on top of the ridges.

Description

technical field [0001] The present invention relates to a semiconductor laser element, and more particularly to a semiconductor laser element used as a power source for an optical disk system, information processing, or optical communication. Background technique [0002] The semiconductor laser elements used in light sources such as optical disk systems are mainly ridge elements, and not only high output corresponding to fast writing is required, but also high-speed response (improved response speed to the light output rise characteristic of injection current). In order to realize high-speed responsiveness, it is necessary to reduce the resistance or capacitance of the laser element. [0003] In order to reduce the resistance, it is effective to enlarge the opening area of ​​the contact layer in the current injection region. In the conventional ridge semiconductor laser element, the verticality of the ridge is improved and the ridge is enlarged by using, for example, anisot...

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Problems solved by technology

However, in the ridge-shaped semiconductor laser element described in the above-mentioned Japanese Patent Laid-Open No. 2003-46197, since the refractive index of the practical dielectric layer used for the barrier layer is small (minimum about 2), if the horizontal aperture angle (Δn: The actual difference in refractive index in the back of the ridge) necessitates designing the film thickness of the cladding layer under the barrier layer to be thick, so the reactive current increases and the threshold current also increases, so the temperature characteristics deteriorate. The problem

In addition, in order to form a current and light confinement structure, a dielectric layer with a lower thermal conductivity than a semiconductor layer is used, so there is a problem that the temperature characteristics of the device are further deteriorated.

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