Semiconductor laser device and method of manufacturing the same

Abstract

The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic, and is comprised of the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; an n-type AlInP block layer 109, has a ridge portion and convex portions formed on the both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only.

Description

technical field [0001] The present invention relates to a semiconductor laser element, and more particularly to a semiconductor laser element used as a power source for an optical disk system, information processing, or optical communication. Background technique [0002] The semiconductor laser elements used in light sources such as optical disk systems are mainly ridge elements, and not only high output corresponding to fast writing is required, but also high-speed response (improved response speed to the light output rise characteristic of injection current). In order to realize high-speed responsiveness, it is necessary to reduce the resistance or capacitance of the laser element. [0003] In order to reduce the resistance, it is effective to enlarge the opening area of ​​the contact layer in the current injection region. In the conventional ridge semiconductor laser element, the verticality of the ridge is improved and the ridge is enlarged by using, for example, anisot...

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Problems solved by technology

However, in the ridge-shaped semiconductor laser element described in the above-mentioned Japanese Patent Laid-Open No. 2003-46197, since the refractive index of the practical dielectric layer used for the barrier layer is small (minimum about 2), if the horizontal aperture angle (Δn: The actual difference in refractive index in the back of the ridge) necessitates designing the film thickness of the cladding layer under the barrier layer to be thick, so the reactive current increases and the threshold current also increases, so the temperature characteristics deteriorate. The problem

In addition, in order to form a current and light confinement structure, a dielectric layer with a lower thermal conductivity than a semiconductor layer is used, so there is a problem that the temperature characteristics of the device are further deteriorated.

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