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Ion source device for low-energy ion beam material preparing method

A low-energy ion beam and ion source technology, applied in the field of ion beams, can solve problems such as poor beam quality and ionization efficiency, high thermal power of ion sources, and affecting work stability, etc., to achieve simple and practical structure, improve ionization The effect of chemical efficiency and simple structure

Inactive Publication Date: 2005-06-29
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the early stage of the development of this technology, the Freeman type ion source was mostly used. This type of ion source has high thermal power and can generate many types of ions. Although solid source materials with high working temperature can be used as working substances, due to When the cathode filament is working, it is easily consumed and thinned by direct sputtering of ions. The service life of the filament is short, which affects its working stability. The beam quality and ionization efficiency are not very good, which also limits its use in Extensive use of low-energy ion beam material preparation techniques
Bernus-type ion source is another type of ion source used in low-energy ion beam material preparation technology. Its beam quality and work stability are better than those of Freeman-type ion source, but the original The cathode filament of the Bernus ion source is located at the upper end of the arc chamber body, and the thermal power is small. Although the ionization efficiency of the gas working substance is high, it is not suitable to use a solid source material with a high working temperature as the working substance, so it can be The types of ions produced are limited, which restricts its widespread use in the preparation of low-energy ion beam materials

Method used

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  • Ion source device for low-energy ion beam material preparing method
  • Ion source device for low-energy ion beam material preparing method
  • Ion source device for low-energy ion beam material preparing method

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Embodiment Construction

[0035] The structure and circuit diagram of the ion source device of the present invention are shown in FIG. 1 .

[0036]The ion source device includes two parts: an arc chamber body 1 and a crucible 11 , and each part is equipped with an auxiliary heating device: an arc chamber heating device 2 and a crucible heating device 12 . The arc chamber body 1 and the crucible 11 are designed to be integrated and separated from the front and back, and there is an exhaust air hole 9 communicating between them. The inner cavity of the arc chamber body 1 is also called an arc chamber or a vacuum discharge chamber, and there are upper and lower double helical filaments 3 (directly heated cathode) and a reflector 4 in the arc chamber. The wall of the arc chamber is at the anode potential, also known as the anode wall. The rear wall has exhaust air holes 9 communicating with the crucible 11, and the front cover plate 7 of the front wall has ion extraction slits 8. The double-helical filame...

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Abstract

This invention relates to ion beam technique, which is applied in the low energy ion beam process method and the ion source device with arc room and crucible. The arc room and the crucible are one part and separate front and back with air hole between them; to load upper and down double screw wires in the arc room; the crucible is of stand type with two kinds of inner cylinders. The reaction container can load solid materials reacting with the working gas. The vapor container can adjust the light wire current between the adjustable assistant heating to control the working temperature of the control source.

Description

technical field [0001] The invention relates to ion beam technology, and is an ion source device that can be used in the preparation method of low-energy ion beam materials. It has simple structure, stable working performance, good beam quality, high ionization efficiency, and a range of source materials that can be selected and used Wide and other characteristics, the device is also applicable to other related ion beam technologies. Background technique [0002] The low-energy ion beam material preparation method with mass separation is a new technology in the development of material preparation, and it can also be referred to as the low-energy ion beam material preparation method. Different from other mature ion beam material preparation methods, such as ion sputtering, ion implantation, ion etching, plasma deposition, etc., this method uses mass-separated low-energy material ions to grow and prepare materials. It can be used for the growth of hard-to-purify, high melting...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J27/02H01J37/08
Inventor 杨少延刘志凯柴春林蒋渭生
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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