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Nanometer SiC powder preparing process

A technology of micron powder and powder, which is applied in the field of SiC micron powder preparation, can solve the problems of high raw material cost, high preparation cost, high preparation cost and high powder making cost, and achieve cost reduction, simple process implementation, and easy mass production Effect

Active Publication Date: 2005-07-13
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the high cost of raw materials, the amount of powder produced is small, and the cost of product preparation is high
It is roughly estimated that the powder preparation cost of the gas phase method is more than 10 times higher than that of the carbothermal reduction method.

Method used

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Experimental program
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Effect test

preparation example Construction

[0017] The invention provides a method for preparing SiC micron powder with low cost, simple implementation process, low energy consumption and easy transition to mass production. The method combines inclusion mixing process, high-temperature carbonization treatment and high-temperature sintering to prepare SiC powder, which includes the following steps in sequence:

[0018] (1) First, mix the Si source, carbon source and alcohol with a particle size of less than 15 microns in a mass ratio of 1: (0.25-2): 2, heat treatment temperature is 30°C-80°C, heat treatment stirring time is 30 minutes- 120 minutes; cold treatment temperature 0℃~10℃, cold treatment stirring time 10 minutes~60 minutes; injection pressure 0.2Mpa~1.2Mpa; aging temperature 30℃~90℃, aging treatment stirring time 30 minutes~120 minutes; vacuum drying temperature 40 ℃ ~ 120 ℃, drying time 30 minutes ~ 120 minutes, to obtain the encapsulation powder with a layer of resin evenly coated on the surface of each Si po...

Embodiment 1

[0024]First, mix silicon powder, 2120 phenolic resin from Shanghai Xinhua Resin Factory and alcohol (mass ratio 1:0.25:2) by inclusion mixing process, heat treatment temperature 40°C, heat treatment stirring time 60 minutes, cold treatment temperature 0°C, cold treatment and stirring The time is 10 minutes, the injection pressure is 0.3Mpa, the aging temperature is 40°C, the stirring time of aging treatment is 30 minutes, the vacuum drying temperature is 40°C, and the drying time is 120 minutes; Carry out high-temperature carbonization treatment in argon, the temperature is 600°C, and the time is 1 hour; finally, the powder obtained by carbonization treatment is sintered at 1500°C for 1 hour in argon with a flow rate of 200ml / min to form SiC powder.

Embodiment 2

[0026] First, mix silicon powder, 2120 phenolic resin from Shanghai Xinhua Resin Factory and alcohol (mass ratio 1:1:2) by inclusion mixing process, heat treatment temperature 40°C, heat treatment stirring time 60 minutes, cold treatment temperature 0°C, cold treatment and stirring The time is 10 minutes, the injection pressure is 0.3Mpa, the aging temperature is 40°C, the stirring time of aging treatment is 30 minutes, the vacuum drying temperature is 40°C, and the drying time is 120 minutes; the inclusion mixing powder is obtained; Carry out high-temperature carbonization treatment in argon gas at a temperature of 600°C for 1 hour; finally, the powder obtained by carbonization treatment is sintered at a high temperature of 1500°C for 1 hour in argon gas with a flow rate of 50ml / min to form SiC powder.

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Abstract

The present invention is micron SiC powder preparing process, and belongs to the field of inorganic material preparing technology. Si source material of grain size smaller than 15 microns, C source material and alcohol in certain mass proportion are first mixed; and the mixture is then high temperature carbonized and high temperature sintered to obtain SiC powder in granularity of micron level, submicron level or even nanometer level. The technological process has low cost, and is simple and suitable for large scale production.

Description

technical field [0001] The invention belongs to the technical field of inorganic material preparation, and in particular relates to a preparation method of SiC micron powder. technical background [0002] Silicon carbide is a compound with extremely strong covalent bonds. Compared with other materials, silicon carbide ceramic materials have low density, high elastic modulus, high thermal conductivity, small thermal expansion coefficient, good oxidation resistance, high temperature strength, and wear resistance. , corrosion resistance and other unique properties. The excellent properties of silicon carbide materials have opened up broad prospects for its application, and are widely used in chemical industry, environmental protection, energy, metallurgy, electronics and other fields. [0003] The main method of industrially manufacturing silicon carbide is the Acheson method, which is realized by reducing silicon dioxide with carbon at a temperature of 1800°C to 2000°C. In t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
Inventor 时利民赵宏生唐春和闫迎辉梁彤祥李自强
Owner TSINGHUA UNIV
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