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Image sensor formed on an n-type substrate

An image sensor and pixel sensor technology, applied in the field of CMOS sensors, can solve the problems of image lag, depletion, incomplete reset of N-well, etc., and achieve the effect of low leakage current and high charge accumulation capacity

Active Publication Date: 2005-08-10
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the junction profile is not optimized for charge transfer, then, as the signal level increases (as a result of increased accumulated charge), the image may become blurred due to incomplete transfer of the mobile charge from the diode to the drifting output node. lag
This could also be related to incomplete reset and depletion of the N-well pinned to the photodiode

Method used

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  • Image sensor formed on an n-type substrate
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  • Image sensor formed on an n-type substrate

Examples

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Embodiment Construction

[0027] The invention relates to the design of a CMOS image sensor with low leakage current and large capacitance. In the following description, many specific details of the present invention will be understood through the description of specific embodiments of the present invention. One skilled in the art will recognize, however, that the invention can be practiced without one or more of these specific details, or that the invention can be practiced with other methods, elements, etc. In addition, well-known structures and operations are not shown or described in detail in order to clearly describe the various embodiments of the present invention.

[0028] In the description of the present invention, when referring to "an embodiment" or "a certain embodiment", it means that the specific features, structures or characteristics described in this embodiment are included in at least one embodiment of the present invention. Thus, appearances of "in an embodiment" or "in a certain e...

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Abstract

A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail Vdd and the output node. Finally, an output transistor with its gate coupled to the output node is provided.

Description

technical field [0001] The present invention relates to a CMOS image sensor, in particular, the present invention relates to a CMOS sensor formed on an N-type substrate with low leakage current and high capacitance. Background technique [0002] Developments in integrated circuit technology have revolutionized many different fields, including computers, control systems, telecommunications, and imaging. Charge-coupled devices (CCDs) have become popular in the imaging field due to their performance characteristics. However, the solid-state CCD integrated circuits required in the imaging field are relatively difficult and expensive to manufacture. In addition, because the process of the signal processing part of the CCD integrated circuit and the image sensor related to the MOS is different, they need to be manufactured on different integrated circuit chips. Therefore, a CCD image device contains at least two integrated circuits: one is a CCD sensor integrated circuit, and th...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L27/148H04N3/15
CPCH01L27/14632H04N3/1512H01L27/14643H01L27/14609H04N25/76H04N25/778
Inventor 真锅素平野崎英骏
Owner OMNIVISION TECH INC