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Protection device of semiconductor circuit with electrostatic discharge protecting circuit

A technology of electrostatic discharge and protection devices, which is applied to semiconductor devices, semiconductor/solid-state device components, circuits, etc., and can solve problems such as difficult positioning and transmission of geometric isolation domains

Active Publication Date: 2005-09-14
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these require a considerable amount of space and are therefore only applicable to a very limited extent, on the one hand avoiding driving and further minimizing the geometry of semiconductor circuits
In addition, geometrically isolated domains make it difficult to locate and transfer these coupled components

Method used

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  • Protection device of semiconductor circuit with electrostatic discharge protecting circuit
  • Protection device of semiconductor circuit with electrostatic discharge protecting circuit
  • Protection device of semiconductor circuit with electrostatic discharge protecting circuit

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0034] figure 2 A first embodiment of the ESD protection device according to the present invention is shown. Simplified diagrams show those semiconductor circuit or integrated circuit components that are important for the explanation of the present invention. The first well region W1 and the second well region W2 are formed as second doped regions in the p-conductive substrate. In one embodiment, the well regions W1 and W2 are of n-conductivity type. The first n-well region W1 is electrically connected to a first supply voltage potential connection VDDP, and the second n-well region W2 is electrically connected to a second supply voltage potential connection VDD. Moreover, the first doped region is formed as the substrate S of the semiconductor circuit, and is contacted with it by the substrate contact SK1. The substrate contact SK1 is in the form of a p+ region in the embodiment. It can also be provided that the first doped region is in the form of a well and / or is conta...

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PUM

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Abstract

The invention relates to an electrostatic discharge (ESD) protection apparatus for a semiconductor circuit, which has at least an ESD protection assembly (SD1-SD4, RS) connected in between a substrate contacting zone (SK1) and a ground potential connection (VSS), and electrically connected to the substrate contacting zone (SK1). The ESD protection assembly is designed as an ESD protection diode (SD1-SD4) type or an ESD protection transistor (ST1, ST2) type; or a resistor (RS) or the ESD protection transistor (ST1) is connected between the substrate contacting zone (SK1) and the ground potential connection (VSS) as the ESD protection assembly, additionally, the ESD protection diode (SD2) type or the ESD protection transistor (ST2)is connected between the substrate contacting zone (SK1) and a supply voltage potential connection (VDD).

Description

technical field [0001] The present invention relates to semiconductors, especially ESD protection devices for integrated circuits. Background technique [0002] Integrated circuits (ICs) are known to be severely damaged or destroyed by electrostatic discharge (ESD) events. Charges associated with discharges can be produced in many ways, for example by lightning, friction between insulators such as synthetic fiber coverings, or by contact with automated chip handling equipment. Whenever an ESD voltage is coupled to one or more of, for example, an I / O connection (signal input and output of an integrated circuit) or a voltage connection, damage or destruction may occur or occur there. [0003] Electron flashover can also occur at these points due to voltage differences during ESD discharge between doped regions such as n-wells connected to different supply voltages. As long as the current in these cases remains limited to values ​​below a certain threshold, the treatment is r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H01L27/02H01L27/082
CPCH01L27/0251
Inventor U·格拉塞H·戈斯纳J·施奈德M·斯特雷布S·巴格斯塔德特－弗兰克
Owner INFINEON TECH AG