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Thin film capacitor and method for manufacturing same

A technology of film capacitors and electrodes, applied in the field of capacitors, can solve the problems of sharp reduction and no performance

Inactive Publication Date: 2005-10-05
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Predictably, although the dielectric constant decreases with decreasing film thickness, it does not exhibit the drastic decrease as in the case of polycrystalline dielectric layers

Method used

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  • Thin film capacitor and method for manufacturing same
  • Thin film capacitor and method for manufacturing same
  • Thin film capacitor and method for manufacturing same

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Embodiment Construction

[0039] The inventors of the present invention discovered that a single crystal lower electrode and a single crystal dielectric layer can be grown on a single crystal silicon substrate.

[0040] Figure 1A represents the structure of the sample. A silicon substrate 1x having a (100) plane is prepared. Using SrTiO 3 Sputtering target, containing Ar and O 2 Ar / O 2 At a substrate temperature of 800°C, RF sputtering was used to form SrTiO with a thickness of about 100 nm on the (100) surface of the silicon substrate. 3 The film 2x serves as an intermediate layer of insulating material.

[0041] The substrate temperature was set to 600° C., a Pt layer 3x with a thickness of about 500 nm was formed as a lower electrode layer on the intermediate layer 2x by DC sputtering in an Ar atmosphere, and Ar / O was passed thereon. 2Atmospheric RF sputtering forms ~50 nm thick BaSrTiO of high dielectric constant perovskite oxides 3 Layer 4x acts as a dielectric layer. The sample 10x was p...

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Abstract

A thin film capacitor is provided which includes a single crystal high dielectric constant dielectric layer. The thin film capacitor has a single crystal silicon substrate, a single crystal intermediate layer epitaxially grown on the single crystal silicon substrate, a single crystal lower electrode epitaxially grown on the single crystal intermediate layer, a single crystal high dielectric constant dielectric layer epitaxially grown on the lower electrode layer, an upper electrode layer formed above the single crystal high dielectric constant dielectric layer, and a plurality of conductor terminals connected to the lower electrode layer and upper electrode layer at a plurality of positions.

Description

technical field [0001] The present invention relates to a capacitor, and more particularly, to a low-inductance, high-capacity capacitor suitable for use as a decoupling capacitor for absorbing noise generated by a large-scale integrated circuit (LSI) operating at a high frequency. [0002] In this specification, a dielectric constant of 10 or more is referred to as a high dielectric constant. Background technique [0003] Capacitors are important constituent elements in large-scale integrated circuits (LSIs) operating at high frequencies. For example, in order to prevent malfunction due to switching noise, etc., a method of reducing the impedance of the power supply is used by connecting a decoupling capacitor that absorbs noise in parallel with the power supply. [0004] The source impedance Z is expressed as: [0005] Z(P)∝V / (nif) (1) [0006] where V is the supply voltage, n is the number of elements per LSI, i is the switching current of the element, and f is the dr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33H01L21/02H01L21/822H01L27/04H01L27/06H01L27/08
CPCH01G4/33H01L27/0629H01L28/40H01L27/0805H01L27/02H10B12/00
Inventor 栗原和明盐贺健司约翰·大卫·巴尼基
Owner FUJITSU LTD
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