Lomposite metallic inorganic source of zirconium hafnium and titanium composited anhydrous nitrate and its synthesis method

Abstract

A metallic composite inorganic source with the formula: (ZrxTiy)(NO3)4, (HfxTiy)(NO3)4, where x+y=1, x=0.1-0.9 and y=0.1-0.9, is prepared from TiCl4 and anhydrous ZrCl4 or HfCl4 through reaction between said metal chlorides and N2O4 in the cold trap of liquid N2, removing residual NOx to obtain white powder, sublimating at 100-120 deg.C to generate white crystals on the container's wall at -20-0 deg.C, and removing residual Nox.

Description

1. Technical field [0001] The invention relates to a novel metal composite inorganic source for chemical vapor deposition (CVD)—composite anhydrous nitrates such as zirconium, hafnium and titanium zirconium, titanium hafnium and the like and a synthesis method thereof. 2. Background technology [0002] Metal-oxide-semiconductor field effect transistors (MOSFETs) in silicon-based semiconductor integrated circuits are the basic units that constitute memory elements, microprocessors and logic circuits, and their volume is directly related to the integration level of VLSI. With the continuous shrinking of the feature size of semiconductor devices, traditional SiO 2 The gate dielectric material cannot overcome the influence of the quantum tunneling effect brought about by the reduction of the feature size of MOSFET devices. As a way to further improve the integration of microelectronic devices, new gate dielectric materials with high dielectric constant (high-k) are sought to re...

AI Technical Summary

Problems solved by technology

The successful preparation of composite metal oxide Zr-Ti-O and Hf-Ti-O thin films by chemical vapor deposition requires Zr, Hf metal organics and Ti organics to have similar thermal properties, but due to the metallicity and atomic radius between metal atoms The difference in thermal evaporation and thermal decomposition of their corresponding organic compounds is often quite different, which brings problems to the successful deposition of composite metal oxides of specific components

In addition, elements such as C, H, F, and Cl contained in metal-organic sources often contaminate the film and deteriorate the film performance.

Moreover, the use of organic sources to deposit oxide films generally requires the introduction of O 2 , O 3 , N 2 O or H 2 O and other oxidizing gases, the deposition temperature is high, these oxidizing gases are easy to oxidize the surface of Si substrate, forming SiO with low dielectric constant 2 interfacial layer, limiting the application of these oxide films as gate dielectrics

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