Lomposite metallic inorganic source of zirconium hafnium and titanium composited anhydrous nitrate and its synthesis method

A technology of metal compounding and synthesis methods, applied in inorganic chemistry, titanium compounds, zirconium compounds, etc., can solve the problems of large differences in thermal evaporation and thermal decomposition properties of organic compounds, deterioration of film properties, low dielectric constant, etc. Low, good volatility, low deposition temperature effect
CN1693533AInactive Publication Date: 2005-11-09NANJING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NANJING UNIV
Publication Date
2005-11-09
Estimated Expiration
Not applicable · inactive patent

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Abstract

A metallic composite inorganic source with the formula: (ZrxTiy)(NO3)4, (HfxTiy)(NO3)4, where x+y=1, x=0.1-0.9 and y=0.1-0.9, is prepared from TiCl4 and anhydrous ZrCl4 or HfCl4 through reaction between said metal chlorides and N2O4 in the cold trap of liquid N2, removing residual NOx to obtain white powder, sublimating at 100-120 deg.C to generate white crystals on the container's wall at -20-0 deg.C, and removing residual Nox.
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Description

1. Technical field

[0001] The invention relates to a novel metal composite inorganic source for chemical vapor deposition (CVD)—composite anhydrous nitrates such as zirconium, hafnium and titanium zirconium, titanium hafnium and the like and a synthesis method thereof. 2. Background technology

[0002] Metal-oxide-semiconductor field effect transistors (MOSFETs) in silicon-based semiconductor integrated circuits are the basic units that constitute memory elements, microprocessors and logic circuits, and their volume is directly related to the integration level of VLSI. With the continuous shrinking of the feature size of semiconductor devices, traditional SiO 2 The gate dielectric material cannot overcome the influence of the quantum tunneling effect brought about by the reduction of the feature size of MOSFET devices. As a way to further improve the integration of microelectronic devices, new gate dielectric materials with high dielectric constant (high-k) are sought to re...

Claims

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