Method and device for generating green laser from semiconductor pump in large power
A laser generation and semiconductor technology, applied in laser cooling devices, lasers, phonon exciters, etc., can solve the problems of low average output power, limited practical application, and poor stability of green lasers
Inactive Publication Date: 2005-11-16
天津市浩波激光电子技术开发有限公司
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Problems solved by technology
The use of Nd:YAG intracavity frequency doubling technology is one of the important ways to realize high-power green light source. At present, the laser is mostly pumped by flash lamp and single-acousto-optic Q-switched flat-flat resonant cavity technology. Due to the thermal stability of the resonant cavity and the Due to the limitations of factors such as the thermal effect of the frequency-doubling crystal, the average output power of the green laser is low and the stability is poor, which greatly limits its practical application in the fields of optical communication and optical manufacturing.
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[0008] The present invention is described below in conjunction with accompanying drawing.
[0009] as attached figure 1 As shown, it is driven by a semiconductor laser power supply to drive a high-power semiconductor pump component to emit 808nm light. This surrounding equidistant pumping method improves the gain distribution characteristics in the working material, and the Nd:YAG laser crystal is pumped with 808nm light, and at the same time With water-cooled constant temperature control, the Nd:YAG laser crystal will radiate 1064nm photons, and the base frequency laser will be formed through the cavity-flat cavity structure resonator. The two control sets of the signal generator have acousto-optic system to make them work synchronously, so that the acousto-optic can reach the best off state. Two acousto-optic Q switches are equipped with water-cooling channels at the same time. One end of the resonant cavity is optimized with a concave total reflection mirror, and the other ...
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The equipment includes following structures: five pieces of semiconductor device is as one group including Nd:YAG laser crystals arranged along circumferential equilateral pentagon; 16 groups of semiconductor pump subassemblies are arranged in long direction with equal distance between each other, and light in 808nm is emitted; through Nd:YAG crystal to remove pumping as well as through optimal resonant cavity in concave - flat cavity structure so as to form light in fundamental frequency; green laser light is generated after modulation by dual acousto-optic Q switch and through frequency doubling by KTP crystal; related water-cooling channel, laser power source and water-cooling thermostat are provided. Power of average output of green light 532nm is reached to 108W. Features are: 1-40KHz adjustable repetition rate, high efficiency, good quality of light beam, and long service life. The invention is applicable to communication, machining and display etc.
Description
technical field [0001] The invention relates to a high-power semiconductor-pumped green laser generation method and device, belonging to the technology of optoelectronic lasers. Background technique [0002] High-power diode-pumped green laser is a new generation of laser optoelectronic devices, and is one of the development directions of current optoelectronic high-tech products. With the development of semiconductor technology, the price of semiconductor laser diodes continues to decline, and the high-power semiconductor diode pump The laser is already close to the lasers of other pumping methods, and the cost is decreasing exponentially, and will eventually surpass the lasers of other pumping methods in an all-round way. The use of Nd:YAG intracavity frequency doubling technology is one of the important ways to realize high-power green light source. At present, the laser is mostly pumped by flash lamp and single-acousto-optic Q-switched flat-flat resonant cavity technolog...
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IPC IPC(8): H01S3/0941
Inventor 姚建铨王涛李喜福徐德刚王鹏
Owner 天津市浩波激光电子技术开发有限公司