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Chemically amplified positive photo resist composition and method for forming resist pattern

A technology of photoresist and composition, applied in the field of chemically amplified positive photoresist composition, capable of solving problems such as poor alkali solubility, achieving high sensitivity, high resolution, and suppressing fluctuations

Active Publication Date: 2005-11-23
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, since the base material resin has an alkali solubility inhibiting group such as a t-butoxycarbonyl group, the alkali solubility is inferior to that of polyhydroxystyrene without a t-butoxycarbonyl group

Method used

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  • Chemically amplified positive photo resist composition and method for forming resist pattern
  • Chemically amplified positive photo resist composition and method for forming resist pattern
  • Chemically amplified positive photo resist composition and method for forming resist pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0247] A polyhydroxystyrene resin solution (styrene constituting unit / hydroxystyrene constituting unit=10 / 90 (mol%), Mw: 2500), 25% by weight of cyclohexanedimethanol diethylene as component (B) Base ether, the photoacid generator represented by the formula (VII-A) as 5% by weight of component (C), 0.28% by weight of tri-n-decylamine and 5% by weight of γ-butylene as component (D) Lactones were mixed (each content is based on the solid content of the polyhydroxystyrene resin), and the mixture was dissolved in 2-heptanone to a concentration of 35% by weight, and the solution was filtered, thereby preparing a resist composition.

[0248] For the obtained resist composition, the following items were evaluated. The obtained results are shown in Table 1.

Embodiment 2

[0250] A polyhydroxystyrene resin solution (styrene constituting unit / hydroxystyrene constituting unit=15 / 85 (mol%), Mw: 4000), 10% by weight of cyclohexanedimethanol diethylene as component (B) Base ether, 2% by weight of the photoacid generator represented by the formula (VII-A) as component (C), 0.28% by weight of tri-n-decylamine and 5% by weight of γ-butylene as component (D) Lactones are mixed (each content is based on the solid content of the polyhydroxystyrene resin), and then the mixture is dissolved in 2-heptanone to form a concentration of 35% by weight, and the solution is filtered, thereby preparing a resist composition .

[0251] For the obtained resist composition, the following items were evaluated. The obtained results are shown in Table 1.

[0252] (1) Sensitivity evaluation

[0253] Using a spin coater, each sample was applied on a silicon substrate, and then heated (pre-baked) in a hot plate at 140° C. for 90 seconds to form a 1.5 μm thick resist film. ...

Embodiment 3

[0274] The following materials were dissolved in the following organic solvents to prepare chemically amplified positive photoresist compositions.

[0275] Component (A'): 100 parts by weight

[0276] (Constituent unit (a1') in component (A'): hydroxystyrene unit in general formula (I'), wherein R is a hydrogen atom, l=1, and hydroxyl is connected at para-position,

[0277] Constituent unit (a1') in component (A'): 80 mol%

[0278] Constituent unit (a2') in component (A'): styrene unit of general formula (II'), wherein R=hydrogen atom, n=0, constitutive unit (a2') in component (A') '): 20 mol%

[0279] Dissolution rate of component (A'): 24nm / sec

[0280] Weight-average molecular weight of component (A'): 10000, degree of dispersion=1.8)

[0281] Component (B'): Photoacid generator represented by compound (G): 5 parts by weight

[0282] Component (C'): cyclohexanedimethanol divinyl ether: 20 parts by weight

[0283] Nitrogen-containing organic compound (D'): triethanolamin...

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Abstract

Provided is a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.

Description

technical field [0001] The invention relates to a chemically amplified positive photoresist composition and a method for forming a resist pattern. [0002] This application claims priority from Japanese Patent Application No. 2003-144700 (filed May 22, 2003) and Japanese Patent Application No. 2003-426503 (filed December 24, 2003), the disclosures of which are incorporated herein by reference. Background technique [0003] In the case of conventional novolak-naphthoquinonediazide resists, a method using a high molecular weight alkali-soluble resin (for example, novolac resin) is generally used to prepare a resist composition with high heat resistance. A method using low molecular weight resins is also utilized in order to obtain high sensitivity. [0004] However, it is difficult to unify sensitivity and heat resistance. When a high-molecular-weight resin is used, sensitivity tends to be poor, and thus it is difficult to apply the resulting composition to a resist for TFT ...

Claims

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Application Information

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IPC IPC(8): G03F7/039
Inventor 中川裕介秀坂慎一丸山健治嶋谷聪增岛正宏新田和行
Owner TOKYO OHKA KOGYO CO LTD
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