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Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor

An oxynitride and phosphor technology, applied in the field of phosphors, can solve the problems of low luminous brightness, insufficient light-emitting device, difficult processing, etc., and achieve the effect of high luminous brightness and excellent characteristics

Active Publication Date: 2005-12-07
NICHIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] In addition, the oxynitride phosphors of the above-mentioned Patent Documents 1 and 2 have low emission luminance, which is not enough for use in light-emitting devices.
In addition, since the phosphor of oxynitride glass is a glass body, it is generally difficult to process

Method used

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  • Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
  • Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor
  • Oxonitride phosphor and method for production thereof, and luminescent device using the oxonitride phosphor

Examples

Experimental program
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Embodiment approach 1

[0155] Embodiment 1 relates to an oxynitride phosphor suitable for use in combination with a light-emitting element, particularly a nitride semiconductor element. The phosphor is excited by light from a nitride semiconductor light-emitting element and generates light having a wavelength different from that of light from the light-emitting element. .

[0156] The oxynitride phosphor of Embodiment 1 is a phosphor in which a rare earth element is used as an activator and contains an oxynitride phosphor crystal containing at least Be, Mg, Ca, Sr, Ba and at least one group II element selected from the group consisting of Zn and at least one group IV element selected from the group consisting of C, Si, Ge, Sn, Ti, Zr, and Hf .

[0157] Here, the oxynitride phosphor crystal is, for example, an oxynitride phosphor composed of an orthorhombic crystal as shown in Examples described later.

[0158] The combination of the aforementioned group II elements and group IV elements is optiona...

Embodiment approach 2

[0218] figure 1 It is a cross-sectional view showing the configuration of a light emitting device according to Embodiment 2 of the present invention. The light emitting device of the present invention includes at least a light emitting element and a first phosphor that converts the wavelength of at least part of light from the light emitting element. Here, particularly in the light-emitting device of the second embodiment, the oxynitride phosphor of the first embodiment is used as the first phosphor.

[0219] In addition, in this specification, the relationship of a color name and a chromaticity coordinate refers to JIS Z8110.

[0220] In the light-emitting device of Embodiment 2, the light-emitting element 10 is composed of a sapphire substrate 1 , a semiconductor layer 2 formed on the sapphire substrate 1 , and positive and negative electrodes formed on the semiconductor layer 2 . The light-emitting element 10 is bonded in a cup of a lead frame 13a, and its positive and neg...

Embodiment approach 3

[0271] 2 is a plan view showing the configuration of a light emitting device according to Embodiment 3 of the present invention ( Figure 2A ) and section view ( Figure 2B ). The light emitting device according to Embodiment 3 is a surface mount type light emitting device. In the light emitting device according to Embodiment 3, as the light emitting element 101 , a nitride semiconductor light emitting element emitting light in an ultraviolet region or a nitride semiconductor light emitting element emitting light in a blue region can be used. In addition, the specific configuration is the same as that of the light emitting element of the second embodiment.

[0272] Here, the light-emitting element 101 that emits light in the ultraviolet region will be described as an example. In Embodiment 3, the light emitting element 101 is a nitride semiconductor light emitting element having an InGaN semiconductor having a light emission peak wavelength of about 370 nm as a light emitti...

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Abstract

An oxonitride phosphor which comprises a crystal containing at least one Group II element selected from the group consisting of Be, Mg, Ca, Sr, Ba and Zn, at least one Group IV element selected from the group consisting of C, Si, Ge, Sn, Ti, Zr and Hf, and a rare earth metal as an activator R. The oxonitride phosphor is exited by an excitation light source of an ultraviolet to visible region and emits a light having a color of from a blue-green region to a yellow region.

Description

technical field [0001] The present invention relates to a phosphor capable of emitting light by being excited by electromagnetic waves such as light and X-rays, electron beams, heat, etc., and particularly relates to light-emitting devices for general lighting such as fluorescent lamps, vehicle lighting, backlights for liquid crystals, displays, and the like. In particular, it relates to white-light and multi-color light-emitting devices using semiconductor light-emitting elements. Background technique [0002] A light-emitting device using a light-emitting element is compact, has good power efficiency, and emits brightly colored light. In addition, since the light-emitting element is a semiconductor element, there is no need to worry about the bulb breaking or the like. In addition, the light-emitting element also has the characteristics of excellent initial driving properties, and resistance to vibration and repeated switch lighting. Due to such excellent characteristics...

Claims

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Application Information

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IPC IPC(8): C09K11/59H01L33/50
CPCH01L2224/48464H01L2224/48091H01L2224/73265H01L2224/45139H01L2224/45144H01L2224/48247H01L2224/49107H01L2924/00011H01L2924/181
Inventor 玉置宽人高岛优龟岛正敏内藤隆宏
Owner NICHIA CORP
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