High-power quick soft-restoring diode and mfg technology thereof

A production process and soft recovery technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of hard reverse recovery characteristics, no high-power fast soft-recovery diode manufacturing process, and it is difficult to solve high-power fast recovery diodes. Soft recovery diode forward voltage drop, reverse recovery characteristics and high power problems, to achieve the effect of soft reverse recovery characteristics
CN1710707AInactive Publication Date: 2005-12-21北京京仪椿树整流器有限责任公司
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
北京京仪椿树整流器有限责任公司
Publication Date
2005-12-21
Estimated Expiration
Not applicable · inactive patent

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Abstract

The disclosed diode is as key part in semiconductor converter assembly of electric power. Structure of silicon chip is in P+PINN+ structure. In order to solve contradiction between forward voltage drop / backward recovery characteristic of diode and large power, following manufacturing steps are added: diffusion of paper source, oxidation, expansion of platinum on silicon chip, electron irradiation for chip etc. Thus, quick and soft backward recovery characteristic of the diode meets requirements of support devices in reverse parallel, absorption, follow current of high frequency arts in high-power such as fast thyristor, GTO, IGCT and IGBT. Power supply unit made from the disclosed diode is widely applicable to steel, petrochemical, electric power, railway and communication industries.
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Description

technical field

[0001] The invention relates to a high-power fast soft-recovery diode, a key component of a power semiconductor converter, and a production process thereof. The power supply device composed of the diode is widely used in steel, petrochemical, electric power, railway, and communication industries. Background technique

[0002] At present, the key components used in power semiconductor converters are high-power fast recovery diodes, which include PN type and PIN type.

[0003] Manufacturing process: one-time diffusion, single-sided P-type removal, phosphorus deposition, P-side dephosphorization, phosphorus advancement, round cutting, sintering, evaporation, corner grinding, corrosion protection, mid-test, electron irradiation, packaging, testing.

[0004] Problems existing in the prior art:

[0005] (1) PN type structure fast recovery diode, the power is easy to increase, but the forward voltage drop is generally relatively large, and the reverse recovery time...

Claims

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