Semiconductor device
A semiconductor and floating technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problems of insulation deterioration, increased insertion loss, leakage of high-frequency signals, etc., to achieve the effect of inhibiting extension and preventing leakage
Inactive Publication Date: 2006-01-04
SANYO ELECTRIC CO LTD
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- Abstract
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- Application Information
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Problems solved by technology
That is, when a high-frequency signal reaches the semi-insulating substrate 210, a corresponding depletion layer is formed on the substrate 210, and the high-frequency signal leaks to the adjacent wiring or element (the operating region of the FET), resulting in insulation. deterioration and increase in insertion loss
Method used
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Embodiment Construction
[0096] refer to Figure 1 to Figure 15 Embodiments of the present invention will be described in detail.
[0097] First, refer to figure 1 and figure 2 An example of a switching circuit device suitable for a high-power application in which a plurality of FETs are connected in series according to the present invention will be described.
[0098] figure 1 It is a circuit diagram showing an example of a compound semiconductor switching circuit device connected in multiple stages. This switching circuit device is called SPDT, and its external terminals are the following five terminals, common input terminal IN, first and second output terminals OUT1, OUT2, first and second control terminals Ctl-1, Ctl-2.
[0099] As shown in the figure, the switching circuit device is composed of, for example, a first FET group F1 and a second FET group F2 that are connected in series with two segments of FETs. In addition, the source electrode (or drain electrode) of FET1-1 of the first F...
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An island-shaped floating conducting region is provided in a region of the substrate between the adjacent wires on the nitride film, between the adjacent wire on the nitride film and conducting region (the operating region, resistor, or peripheral impurity region), or between the adjacent wire on the nitride film and gate metal layer. The floating conducting region has floating potential and blocks a depletion layer extending from the wire on the nitride film to the substrate. It is therefore possible to prevent leakage of a high frequency signal to the other side through the depletion layer extending from the wire on the substrate to the substrate in a region of the substrate between the adjacent wires on the nitride film, between the adjacent wire on the nitride film and conducting region (the operating region, resistor, peripheral impurity region), or between the adjacent wire on the nitride film and gate metal layer.
Description
technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device with reduced insertion loss. Background technique [0002] In mobile communication devices such as mobile phones, microwaves in the GHz band are often used, and switching elements for switching these high-frequency signals are often used in antenna switching circuits or switching circuits for transmitting and receiving (for example, Japanese Patent Application Laid-Open No. 9-181642). As its components, field-effect transistors (hereinafter referred to as FETs) using gallium-arsenic (GaAs) are often used because they must handle high frequencies. Along with this, monolithic microwave integrated circuits that integrate the above-mentioned switching circuits themselves are in progress. (MMIC) development. [0003] Figure 16 It is a diagram showing an example of a compound semiconductor switching circuit device connected in multiple stages. This ci...
Claims
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IPC IPC(8): H01L27/04H03K17/00H01L21/822H01L27/06H01L27/095H01L31/0328H03K17/693
CPCH03K17/693H01L27/0629H01L24/05H01L2224/48463H01L2924/12032H01L2224/04042H01L2924/14H01L2924/00H01L29/7783
Inventor 浅野哲郎
Owner SANYO ELECTRIC CO LTD