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Organic film transistor containing non-reactive active buffer layer and making method thereof

An organic thin film and buffer layer technology, applied in the field of OTFT containing a non-reactive buffer layer and its fabrication, can solve the problems of loss of on-off current ratio, poor repeatability, increased conductance, etc., to enhance on-state current and improve performance , the effect of reducing off-state current

Inactive Publication Date: 2006-01-11
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the diffusion of ions, the bulk conductance increases, thereby losing the on-off state current ratio (Appl. Due to the poor repeatability of this method, there are still some problems in practical application

Method used

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  • Organic film transistor containing non-reactive active buffer layer and making method thereof
  • Organic film transistor containing non-reactive active buffer layer and making method thereof
  • Organic film transistor containing non-reactive active buffer layer and making method thereof

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Embodiment 1

[0030] The monophthalocyanine compounds used below are commercially available, and the bisphthalocyanine compounds were synthesized by known methods. The above two materials were purified three times by vacuum sublimation.

[0031] A layer of Ta metal film was plated on the 7059 glass substrate 1 by radio frequency magnetron sputtering method, and the sputtering conditions were: background vacuum 2×10 -3 Pa, Ar gas pressure 1Pa, RF power 500W, substrate temperature 100°C, and photolithographically form the gate electrode 2; a layer of 300nm Ta is continuously sputtered on the substrate 1 and the gate 2 by DC magnetron sputtering method 2 o 5 As the gate insulating layer 3, the reactive sputtering condition is: background vacuum 2×10 -3 Pa, O 2 Air pressure 0.9Pa, DC power 500W, substrate temperature 100℃, then, at 10 -5 The quartz boat that is filled with CuPc powder is heated under the high vacuum of Pa, makes it sublime to form the semiconductor active layer 4 of thickne...

Embodiment 2

[0033] The material used for the buffer layer is a charge transfer complex containing 7,7',8,8'-tetracyanobenzoquinone. The source and drain electrode materials used are double-layer metal films of Ti and Au. The insulating material used is Al 2 o 3 . All the other processing steps and conditions are identical with embodiment 1.

Embodiment 3

[0035] The material used for the buffer layer is polyacetylene. The source-drain electrode material used is Ag. The insulating material used is TiO 2 . All the other processing steps and conditions are identical with embodiment 1.

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Abstract

This invention relates to an organic film transistor with a non-reaction active buffer layer and its preparation method, which adds a non-reaction active buffer layer between a source / drain electrode and an organic semiconductor, the buffer layer is made of organic semiconductor material with the conductivity between 0.000001~0.1 one over omega one over cm, said buffer layer is designed to reduce the contact potential burrier between metal electrode and the organic semiconductor to increase injection efficiency of charges. The buffer layer can be put under the source / drain electrode by photoetch strip or mask edition or etching.

Description

technical field [0001] The invention belongs to the technical field of organic thin film transistors (hereinafter referred to as OTFT), and specifically relates to an OTFT containing a non-reactive buffer layer and a manufacturing method thereof. Background technique [0002] In recent years, OTFT has shown application potential in flexible active matrix displays and flexible integrated circuits. The development of materials and devices with high carrier mobility, low operating voltage and large switching current ratio is an urgent need for the practical application of OTFT. However, the large contact resistance severely limits the carrier injection and degrades the device performance. F.Garnier et al. provide a method using the charge transfer complex TCNQ as a dopant (F.Garnier et al Mat.Res.Symp.Soc.Bull, 52-56, June1999) to improve the loading of the source / drain electrodes. However, due to the poor film-forming properties of the charge-transfer complex and the movemen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
Inventor 闫东航王军张吉东
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI