Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor integrated circuit device

A technology of integrated circuits and semiconductors, applied in the field of electrostatic discharge protection devices, which can solve the problems of high breakdown strength and low withstand voltage.

Inactive Publication Date: 2006-02-01
SII SEMICONDUCTOR CORP
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the withstand voltage of the ESD protection element on the semiconductor support substrate is too high, the protection element cannot react with the ESD noise from the output terminal 302, and the noise enters the internal element on the SOI semiconductor thin film to cause breakdown of the internal element, Therefore, the ESD protection element on the semiconductor support substrate should be designed to ensure high breakdown strength in one direction, and to keep the withstand voltage of the ESD protection device lower than that of the internal components.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor integrated circuit device
  • Semiconductor integrated circuit device
  • Semiconductor integrated circuit device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. figure 1 is a cross-sectional view showing a semiconductor integrated circuit device according to an embodiment of the present invention. The silicon-on-insulator (SOI) substrate is composed of, for example, a semiconductor support substrate 101 of P-type conductivity formed of a single crystal, a buried insulating film 103, and a semiconductor thin film of P-type conductivity formed of a single crystal and used to form elements. 102 compositions. Formed on the P-type semiconductor film 102 is a first N-channel MOS transistor (herein abbreviated as "NMOS") 113 and a first P-channel MOS transistor (herein abbreviated as "PMOS") 112 which are used as internal elements. 10 CMOS inverters, and a P composed of polysilicon as a resistor element 30 - Resistor 114. However, the internal element 10 is not limited to a CMOS inverter, but can be set to be arbitral. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a structure in which a gate electrode of an MMOS transistor of a fully depleted SOT CMOS circuit formed on a semiconductor thin film has an N-type conductivity, while a gate electrode of an protection NMOS transistor as an ESD input / output protection element formed on a semiconductor support substrate has a P-type conductivity, making it possible to protect input / output terminals, especially, an output terminal of a fully depleted SOI CMOS device, which is weak against ESD noise, while ensuring a sufficient ESD breakdown strength.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit device, and more particularly, to an electrostatic discharge (ESD) protection device for an SOI structure. Background technique [0002] A semiconductor integrated circuit device includes a resistance circuit consisting of a resistor composed of polysilicon or the like, an input or output protection element composed of a diode or the usual, and a MOS transistor is provided between an internal circuit and an external input / output terminal to prevent static electricity from external The extra current flowing into the circuit causes breakdown of the internal components comprising the internal circuit. [0003] figure 2 A to 2C show examples of input / output circuit units in a conventional semiconductor integrated circuit device having a protection circuit. exist figure 2 In A, a CMOS inverter composed of an N-channel MOS transistor 113 and a P-channel MOS transistor 112 serves as the in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L23/60
CPCH01L27/0629H01L27/1203H01L27/0266H01L27/04
Inventor 长谷川尚吉田宜史
Owner SII SEMICONDUCTOR CORP