Pressure resistance large overloading accelerometer and preducing method thereof

An accelerometer and large overload technology, applied in the field of microelectronics, can solve the problems of incompatibility of integrated circuit technology, poor sensitivity of large overload accelerometers, etc., and achieve the effect of easy anti-high overload structure, simple structure and good impact resistance
CN1740796AInactive Publication Date: 2006-03-01北京青鸟元芯微系统科技有限责任公司
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
北京青鸟元芯微系统科技有限责任公司
Publication Date
2006-03-01
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention provides a piezoresistive large-overload accelerometer. It is made up by adopting Si base MEMS technique. Said invention also provides the concrete steps of its preparation method. It can convert mechanical impact signal into electric signal, after the output signal is undergone the processes of amplification and temperature compensation, it can be used for calibrating acceleration extent.
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Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and in particular relates to a piezoresistive inertial sensor used for measuring large overload acceleration (1000g-100000g) in a microelectromechanical system. Background technique

[0002] It is difficult to make accelerometers resistant to large overload by using traditional devices. Most of the methods currently used are to use SiC materials to make such devices by using micro-electromechanical system processing methods, and deposit SiC materials on silicon substrates to form composite films. structure, the piezoresistor is formed by implanting impurity ions into SiC, and then the Si substrate on the back of the SiC film is etched away by back etching. Using the piezoresistive properties of the SiC material, when there is an external impact, the SiC film due to inertia The deformation occurs, so that the stress distribution on the surface changes, and the piezoresistive resistance va...

Claims

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