Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Trench MOSFET technology for DC-DC converter applications

A DC converter and slot technology, which is applied in the field of 7] to achieve the effect of reducing the start-up resistance, the start-up resistance and the improvement of the current-carrying capacity characteristics.

Inactive Publication Date: 2006-03-01
INTERNATIONAL RECTIFIER COEP
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increases in cell density in power MOSFETs may be limited by the inherent shortcomings of the material conditions and processing steps that make up the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench MOSFET technology for DC-DC converter applications
  • Trench MOSFET technology for DC-DC converter applications
  • Trench MOSFET technology for DC-DC converter applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] exist figure 1 Here, the semiconductor device of the present invention is formed in a silicon wafer 5 comprising a drain region 10 of a first conductivity type and a channel region 12 slightly doped with a dopant of a conductivity type opposite to that of the drain region 10. The semiconductor device of the present invention includes multiple trenches 14 extending from the top surface of the silicon wafer 5 to the drain region 10, where the trenches 14 are formed of a gate electrode 16 using a conductive material such as doped polysilicon. The gate electrode 16 is electrically insulated from the channel region 12 by the oxide layer 18 . An oxide layer 18 grows on both side walls of each trench 14, and care must be taken to form a thicker oxide layer 15 at the bottom of each trench.

[0021] The semiconductor device of the present invention further includes a self-aligned source region 20 disposed on opposite sides of each trench 14 and extending to a predetermined dept...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A trench power semiconductor device including a recessed termination structure (15).

Description

[0001] Cross References to Applications [0002] This application is a continuation-in-part of U.S. Patent Application Serial No. 10 / 674,444, filed September 2003, entitled "Semiconductor Device Processing," which claims U.S. Provisional Application No. 60 / 415,302, filed September 30, 2002, and Priority to U.S. Provisional Application No. 60 / 444,064, filed January 29, 2003. This application is also based on US Provisional Application No. 60 / 444,064, filed January 29, 2003, entitled "Use of Trench MOSFET Technology in DC-DC Converters," and hereby claims priority. Background technique [0003] DC-DC (Direct Current-Direct Current) converters are mainly used in battery-operated devices such as laptop computers, mobile phones, personal digital assistants, to regulate the power supplied by the battery to the device. The life of batteries used in mobile devices depends on the efficiency of the power line, so the increasing demand for batteries to provide more power and longer life...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/76H01L21/336
CPCH01L29/66727H01L29/42368H01L29/7811H01L29/407H01L29/7813
Inventor 林・马亚当・阿玛丽悉达多・凯耶沃特阿什塔・迈克丹尼唐纳德・何娜瑞雪・坦帕瑞图・索德黑凯丽・斯伯林丹尼尔・金泽
Owner INTERNATIONAL RECTIFIER COEP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com