Trench MOSFET technology for DC-DC converter applications
A DC converter and slot technology, which is applied in the field of 7] to achieve the effect of reducing the start-up resistance, the start-up resistance and the improvement of the current-carrying capacity characteristics.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2006-03-01
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 
Figure 2 
Figure 3
Abstract
Description
[0001] Cross References to Applications
[0002] This application is a continuation-in-part of U.S. Patent Application Serial No. 10 / 674,444, filed September 2003, entitled "Semiconductor Device Processing," which claims U.S. Provisional Application No. 60 / 415,302, filed September 30, 2002, and Priority to U.S. Provisional Application No. 60 / 444,064, filed January 29, 2003. This application is also based on US Provisional Application No. 60 / 444,064, filed January 29, 2003, entitled "Use of Trench MOSFET Technology in DC-DC Converters," and hereby claims priority. Background technique
[0003] DC-DC (Direct Current-Direct Current) converters are mainly used in battery-operated devices such as laptop computers, mobile phones, personal digital assistants, to regulate the power supplied by the battery to the device. The life of batteries used in mobile devices depends on the efficiency of the power line, so the increasing demand for batteries to provide more power and longer life...
Examples
Embodiment Construction
[0020] exist figure 1 Here, the semiconductor device of the present invention is formed in a silicon wafer 5 comprising a drain region 10 of a first conductivity type and a channel region 12 slightly doped with a dopant of a conductivity type opposite to that of the drain region 10. The semiconductor device of the present invention includes multiple trenches 14 extending from the top surface of the silicon wafer 5 to the drain region 10, where the trenches 14 are formed of a gate electrode 16 using a conductive material such as doped polysilicon. The gate electrode 16 is electrically insulated from the channel region 12 by the oxide layer 18 . An oxide layer 18 grows on both side walls of each trench 14, and care must be taken to form a thicker oxide layer 15 at the bottom of each trench.
[0021] The semiconductor device of the present invention further includes a self-aligned source region 20 disposed on opposite sides of each trench 14 and extending to a predetermined dept...