Method for removing substance from substrate using electron attachment

A material and electronic technology, applied in the field of material removal, can solve the problems of power consumption, reactive gas utilization and other problems

Inactive Publication Date: 2006-05-10
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Power consumption and reactive gas utilization are ongoing difficulties in current dry etch processes

Method used

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Examples

Experimental program
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Effect test

Embodiment Construction

[0014]The methods described herein can be used to remove material (eg, etch) from at least a portion of a substrate comprising a semiconductor material and to clean a reaction chamber and / or contained fixtures for semiconductor fabrication. Accordingly, suitable substrates for etching embodiments include, for example, semiconductor materials and the like, while suitable substrates for cleaning embodiments include, for example, the surface of a reaction chamber for CVD and / or ALD processing. In both embodiments of the method described herein, species cannot be efficiently removed from at least a portion of the substrate by negatively charged gases formed by electron attachment. The nature of the species to be removed depends on the type of substrate (eg, reaction chamber vs. semiconductor material). In some etch embodiments, the nature of the species to be removed may be the same as that of the substrate itself. In these embodiments, at least a portion of the substrate may be ...

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PUM

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Abstract

A method of removing species from at least a portion of a substrate, such as a reaction chamber or a semiconductor material, is disclosed herein. In one aspect, there is provided a method comprising: providing a reaction chamber having a surface coated with a substance; providing first and second electrodes proximate to the reaction chamber, wherein the first and second electrodes are located within a target region; delivering a gas mixture comprising a reactive gas; energizing the first and / or second electrodes to generate electrons in the target region, wherein at least a portion of the electrons attach to at least a portion of the reactive gas, thereby forming a negatively charged purge gas; contacting the substance with a negatively charged purge gas, the negatively charged purge gas reacts with the substance and forms a volatile product; and removing the volatile product from the reaction chamber.

Description

technical field [0001] The present invention relates to a method of removing a substance from at least a portion of a coated substrate, and more particularly to a method for removing a substance from a substrate such as a semiconductor material itself. Background technique [0002] In the manufacture of semiconductor integrated circuits (ICs), optoelectronic devices, microelectromechanical systems (MEMS), and other electronic devices, multiple steps of thin film deposition are performed to form several complete circuits on a substrate of, for example, semiconductor material ( chips) and devices. Each substrate is often deposited with various thin films such as, but not limited to, conductive films such as tungsten; semiconducting films such as doped and undoped polysilicon (poly-Si), doped and undoped (intrinsic) amorphous silicon (a-Si), etc.; dielectric films, such as silicon dioxide (SiO 2 ), undoped silica glass (USG), boron doped silica glass (BSG), phosphorus doped s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00B08B7/00C23C16/00C23C16/44C23C16/56C25F1/00
CPCB08B7/0035C23C16/4405
Inventor 董忠齐宾
Owner AIR PROD & CHEM INC
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