Insulated power semiconductor module with reduced partial discharge and manufacturing method

Abstract

A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method comprises the following steps: bonding an insulating substrate to a bottom plate (11); providing a first conductive layer (4) on a part of the insulating substrate (2), so that at least a peripheral top area remains uncovered by said first conductive layer (4); bonding a semiconductor chip (6) to said first conductive layer (4); after said first conductive layer (4) and said first conductive layer (4) The first corner (24) formed by the peripheral region of the insulating substrate (2) is provided with a precursor (51) of a first insulating material (5); polymerizing the precursor (51) of the first insulating material (5) ) to form the first insulating material (5); at least partially cover the semiconductor chip (6), the substrate (2), the first conductive layer (4) with a second electrical insulating material (8) ) and the first insulating material (5). According to the invention, the precursors ( 51 ) of said first insulating material ( 5 ) are low viscosity monomers or oligomers which form polymers when polymerized. A semiconductor module with reduced partial discharge behavior is also disclosed.

Description

technical field [0001] The invention described herein relates to the field of semiconductor devices. In particular, the invention relates to a production method for a power semiconductor module with reduced partial discharge behavior and to a power semiconductor module with reduced partial discharge behavior as described in the preambles of the independent claims. Background technique [0002] A discharge that does not completely bridge the electrodes of an electrical device or module is called a partial discharge. High voltage (HV) components and equipment, such as HV capacitors, HV cables, HV transformers, HV isolated power modules, especially power semiconductor modules, etc., are particularly prone to failure due to partial discharges. Although such discharge magnitudes are usually small, they cause progressive degradation and can lead to eventual failure of the semiconductor device or module. [0003] The component that is significantly affected by partial discharges ...

AI Technical Summary

Problems solved by technology

[0006] In addition, the layout of the metallization on the ceramic substrate is usually obtained by an etching process, which usually results in borders with many metal inhomogeneities, which in turn lead to locally high field densities during module operation

Adhesion is poor at such critical locations when silicone coatings are applied, and air bubbles are often present, leading to PD activity