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Method of producing a dopant gas species

A technology of dopants and substances, applied in the field of ion sources

Inactive Publication Date: 2006-07-26
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there is a problem that fine control of the furnace temperature is required

Method used

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  • Method of producing a dopant gas species
  • Method of producing a dopant gas species
  • Method of producing a dopant gas species

Examples

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Embodiment

[0055] By way of example, FIG. 4 shows the results of experiments performed using the ion source 14 shown in FIGS. 2 and 3 . In the experiment, 100 g of bromine liquid 64 was placed in stainless steel container 62 . The flow rate of bromine vapor 56 was adjusted to 0.24 sccm, which was found to optimize In ++ generation of ions.

[0056] Furnace 21 contained 8 g of indium metal strip 54 and was heated to 380°C. The arc chamber 16 is operated at 75V / 1A to form an arc. Using an extraction current of 12 mA, the extraction voltage was 50 kV. The pumping voltage is usually low, but observe that In + ion. These conditions yield 1mA of In ++ The beam current, shown in FIG. 4 , shows the beam current for different ions drawn from the arc chamber 16 . During implantation, bromide ions and undesired indium ions can be rejected or selected by mass analysis magnet 30 .

[0057] In addition, the effect of changing the furnace temperature on 1mA In ++ beam effects. The initial tem...

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Abstract

This invention relates to a method of producing a dopant gas species containing a required dopant element for implanting in a target and to an ion source for implementing such a method. In particular, although not exclusively, this invention relates to producing dopant ions for implanting in semiconductor wafers using an ion implanter. The present invention provides a method of producing a dopant gas species containing a required dopant element for implanting in a target, the method comprising: exposing a source mass of the element to gaseous bromine and element react to form a reactant product, and ionising the reactant product to produce ions of the dopant gas species.

Description

technical field [0001] The present invention relates to a method of producing a dopant gas species or species containing a desired dopant elemental composition of an implantation target, and ion sources for carrying out the method. In particular, but not exclusively, the invention relates to generating dopant ions for implantation into semiconductor wafers using an ion implanter. Background technique [0002] The semiconductor industry requires the production of semiconductor devices, which is often accomplished by fabricating arrays of many devices on a single wafer. Semiconductor devices typically require very fine tolerances of doping to obtain desired properties. This doping is performed using an ion implanter that includes an ion source that produces ions corresponding to, or containing, the desired dopant. Optics then form the ions into a focused ion beam, which is incident on the wafer. The control of the ion beam (eg, beam current, ion content, energy, size, scan,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/06C30B31/16C30B25/14C23C16/448H01L21/205H01L21/383
CPCH01J2237/0815H01J2237/061H01J2237/083H01J27/022H01J37/08H01J37/3171B01J19/08B01J12/00B01J8/18
Inventor G·吕丁S·萨托
Owner APPLIED MATERIALS INC
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