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Technique for growing Cd-Zn-Te crystal

A technology for growing crystals, cadmium zinc telluride, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve problems such as difficulties, increase scientific research and production costs, cannot effectively control the number of nucleation in the initial stage of crystal growth, etc. The effect of production costs

Inactive Publication Date: 2006-08-30
KUNMING INST OF PHYSICS
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Problems solved by technology

However, due to the inherent physical, chemical and metallurgical properties of CdZnTe, it is very difficult to grow the alloy crystal ingot into a whole single crystal, and it is often composed of several larger single crystals, and even there is no usable size. Single crystal blocks lead to a low single crystal crystallization rate, only about 40%, which directly affects the level of yield, which is only about 10%, and increases the cost of scientific research and production
This growth method leads to the main reasons for the low crystallization rate of single crystal: (1) It is unable to effectively control the number of nucleation in the initial stage of crystal growth
(2) Among the many crystal nuclei, there are likely to be multiple growth nuclei with advantages and disadvantages. As the growth continues, they go hand in hand, eventually resulting in multiple large and small single crystals, and the crystallization rate of large single crystals is low.

Method used

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  • Technique for growing Cd-Zn-Te crystal
  • Technique for growing Cd-Zn-Te crystal
  • Technique for growing Cd-Zn-Te crystal

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Embodiment Construction

[0010] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0011] According to the test analysis, two problems must be solved in order to improve the single crystal crystallization rate and yield of CdZnTe alloy ingot. 1. The number of nucleation in the initial stage of crystal growth must be controlled. 2. It is necessary to choose the seeding crystal direction with growth advantages

[0012] refer to Figure 4 . The main technical scheme of the present invention is: according to the selected , , or superior seeding crystal direction, prepare a seed crystal block or rod with a certain specification range, and pack the seed crystal into the bottom cavity 1 of the quartz tube, and the upper part of the quartz tube 3 is filled with a cadmium zinc telluride alloy crystal ingot 5 to grow a cadmium zinc telluride crystal.

[0013] The crystal direction described in the scheme is to represent the crystal direct...

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Abstract

The invention relates to a crystal growth for Te-Zn-cadmium crystal ingot. The process includes the following steps: according to the selected superiority crystal seeding direction to make seed crystal block or stick in certain specification, adding the seed crystal into silica tube bottom cavity, and the upper adding to Te-Zn-cadmium alloy crystal ingot to grow Te-Zn-cadmium crystal ingot. The invention would improve crystallizing rate from 40% to 65%, and yield from 10% to 20%, and effectively decrease producing cost.

Description

1. Technical field [0001] The invention belongs to a process method for growing crystals. It is mainly used for CdZnTe ingot growth crystal, and can also be used for similar crystal growth. 2. Background technology [0002] The existing method for growing CdZnTe crystal mostly adopts the Bridgman melt growth technique, and its general technological process (see figure 1 ): 1. CdZnTe ingredients, 2. Vacuum encapsulation, 3. Put it into a synthesis furnace and heat it, 4. Carry out a compound reaction, 5. Cool down after the reaction to form a CdZnTe alloy, 6. Put it into a crystal growth 7. Move the material pipe to grow into crystals. 8. Take out the crystals after cooling down. 9. Carry out directional cutting of the crystals. 10. Perform inspection. However, due to the inherent physical, chemical and metallurgical properties of CdZnTe, it is very difficult to grow the alloy crystal ingot into a whole single crystal, and it is often composed of several larger single cryst...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B1/00
Inventor 姬荣斌赵增林万锐敏岳全龄张鹏举吴刚胡赞东黄晖王晓薇张小文计瑞松宋炳文蔡春江
Owner KUNMING INST OF PHYSICS