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Method for preventing metals from being damaged by high density plasma chemical vapor deposition

A chemical vapor deposition, chemical vapor deposition technology, applied in the direction of gaseous chemical plating, metal material coating process, electrical components, etc., can solve problems such as metal damage, to reduce damage, good protection, good sidewall coverage Effect

Inactive Publication Date: 2006-09-13
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

However, when using this method, since the bias power is still in the "on" state, it will still cause certain damage to the metal.

Method used

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  • Method for preventing metals from being damaged by high density plasma chemical vapor deposition
  • Method for preventing metals from being damaged by high density plasma chemical vapor deposition

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Embodiment Construction

[0021] see figure 1 In the integrated circuit manufacturing process, metal etching needs to be completed. In this embodiment, the metal layer includes titanium nitride 1 , titanium 2 and aluminum-copper alloy / aluminum 3 .

[0022] see figure 2 After the metal is etched, a layer of silicon dioxide is deposited on the etched surface by plasma-assisted chemical vapor deposition (PECVD). figure 1 The middle metal layer is used as the substrate for deposition. In this embodiment, plasma-assisted chemical vapor deposition (PECVD) is performed on the silicon wafer that has been etched by metal, such as deposited in the chamber of the Producer CVD of Applied Materials, and the formed silicon dioxide (SiO 2 ) layer thickness of 200A, 300A or 500A.

[0023] Among them, the precursor in plasma-assisted chemical vapor deposition (PECVD) is tetraethylorthosilicate (TEOS), and the reaction gas is oxygen (O 2 ), the temperature in the plasma-assisted chemical vapor deposition is 350° C....

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Abstract

The invention relates to a method to avoid damage to metal from high density plasma CVD that adopts plasma assistant CVD method to etch surface sediment a SiO2 layer after finishing etching the metal in IC manufacturing process. It induces sediment thin film medium to decrease the damage to metal from high density plasma CVD sediment process. It uses tetraethylorthosilicate as front driving material to form a SiO2 layer to supply good protection for metal.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing technology, in particular to a method for preventing metal damage during high-density plasma chemical vapor deposition (HDP CVD). Background technique [0002] Aluminum (Al), as a conductive metal, has been fully used in integrated circuits. In the early days, aluminum (Al) was used as a filling metal for contact holes. With the development of technology, there are more and more wiring in the back channel, single-layer wiring can no longer meet the requirements, and multi-layer wiring has appeared. Aluminum (Al) has been widely used as a subsequent interconnection metal. [0003] Generally, in the manufacturing process of integrated circuits, the etching of aluminum (Al) is followed by high-density plasma silicon dioxide (HDP SiO 2 ) deposition. High-density plasma (HDP) has a longer mean free path than ordinary plasma-assisted chemical vapor deposition (PECVD), and th...

Claims

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Application Information

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IPC IPC(8): C23C16/513C23C16/40H01L21/205
Inventor 胡正军
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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