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Method for preparing barium strontium titanate ferroelectric film

A technology of barium strontium titanate and ferroelectric thin film, applied in ion implantation plating, metal material coating process, coating, etc., can solve difficult problems such as BST thin film

Inactive Publication Date: 2006-09-27
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to control the preferred orientation of BST films with traditional film preparation processes and methods.

Method used

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  • Method for preparing barium strontium titanate ferroelectric film
  • Method for preparing barium strontium titanate ferroelectric film
  • Method for preparing barium strontium titanate ferroelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The background vacuum of the radio frequency magnetron sputtering instrument is evacuated to 1.0×10 by the two-stage pump of the mechanical pump and the turbomolecular pump -5 Pa, the high-purity Ar, O 2 (purity 99.99%) into the sputtering device, high-purity Ar, O 2 The flow rates are 16sccm and 4sccm respectively, and the flow rate is controlled by a gas mass flowmeter. The substrate temperature is 600°C, the power of the RF source is 120W, and the working pressure is kept at 3.9Pa. Apply the RF source, start sputtering, and pre-sputter for 15 minutes. Remove pollutants, impurities, etc. on the surface of the target; align the BST ceramic target with the substrate, and the generated sputtering particles are deposited on the substrate to form a thin film. The deposited film was raised from room temperature to 750°C at a heating rate of 2°C / min in a quartz tube furnace for 2 hours, then cooled to room temperature and taken out to obtain a BST film. The prepared BST fil...

Embodiment 2

[0025] The background vacuum of the radio frequency magnetron sputtering instrument is evacuated to 1.0×10 by the two-stage pump of the mechanical pump and the turbomolecular pump -5 Pa, the high-purity Ar, O 2 (purity 99.99%) into the sputtering device, high-purity Ar, O 2 The flow rates are 16sccm and 8sccm respectively, and the flow rates are controlled by gas mass flowmeters. The substrate temperature is 600°C, the power of the RF source is 120W, and the working pressure is maintained at 3.9Pa during the film deposition process. Apply a radio frequency source, start sputtering, and pre-sputter for 15 minutes to remove pollutants and impurities on the target surface; align the BST ceramic target with the substrate, and deposit the sputtered particles on the substrate to form a thin film. The deposited film was placed in a quartz tube furnace from room temperature to 750 °C at a heating rate of 2 °C / min for 2 hours, then cooled naturally to room temperature and taken out. ...

Embodiment 3

[0027] The background vacuum of the radio frequency magnetron sputtering instrument is evacuated to 1.0×10 by the two-stage pump of the mechanical pump and the turbomolecular pump -5 Pa, the high-purity Ar, O 2 (purity 99.99%) into the sputtering device, high-purity Ar, O 2 The flow rates are 16sccm and 8sccm respectively, the flow rate is controlled by the gas mass flowmeter, the substrate temperature is 600°C, the RF source power is 120W, and the working pressure is maintained at 2.5Pa during the film deposition process. Apply a radio frequency source, start sputtering, and pre-sputter for 15 minutes to remove pollutants and impurities on the target surface; align the BST ceramic target with the substrate, and deposit the sputtered particles on the substrate to form a thin film. The deposited film was placed in a quartz tube furnace from room temperature to 750 °C at a heating rate of 2 °C / min for 2 hours, then cooled naturally to room temperature and taken out. The prepar...

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Abstract

This invention relates to a method for preparation of iron conductive film containing strontium barium titanate(BaxSr1-xTiO3,abbreviation BST),which adopts a method of radio-frequency magnetron sputtering. Making particles produced from discharge of sputtering gas to bombard BST ceramic target material, to produce target particles and make them deposit on substrate, annealing them with different annealing process to get different preferred oriented BST film. The BST iron conductive film produced with this invention is carried out by controlling the processing parameter of sputtering process and the annealing process after sputtering. The method has a simple process and easy operation control. This BST film can satisfy the need of exploitation of microelectronic device to different characteristic to ST iron conductive film, and adapt to preparing encapsulating material of large scale integrated circuit. And it also can be used in the spheres such as machinery, electron, daily-use chemical industry, biological medicine.

Description

technical field [0001] The present invention relates to a barium strontium titanate (Ba x Sr 1-x TiO 3 ) Preparation method of ferroelectric thin film. Background technique [0002] Ferroelectric barium strontium titanate (Ba x Sr 1-x TiO 3 , referred to as BST) thin films are key materials in many fields such as thin film capacitors, electro-optical devices, pyroelectric infrared detectors and detector arrays, ferroelectric memories, and phase-shift antennas. As a device application, thin film materials should have extremely excellent properties: dense structure, high dielectric constant, low dielectric loss, high dielectric tunability, light transmittance, etc., and these properties are required according to the development environment of the device And technical requirements are adjustable. The optical and electrical properties of thin film materials are related to their own structural orientation, especially the electrical properties of thin films are closely rela...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/54
Inventor 章天金李颂战张柏顺
Owner HUBEI UNIV
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