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Method for making thin-film transistor

A technology of thin-film transistors and thin-film layers, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as light leakage current and high cost, reduce the use of photomasks, and avoid light leakage current , The effect of reducing the process cost

Active Publication Date: 2006-10-25
AU OPTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] Therefore, the main purpose of the present invention is to provide a method for making a thin film transistor by using a lift-off process and a metal-containing sacrificial layer, so as to solve the problems of high cost of the existing thin film transistor process and the easy occurrence of light leakage current.

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  • Method for making thin-film transistor
  • Method for making thin-film transistor
  • Method for making thin-film transistor

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Embodiment Construction

[0041] Please refer to Figure 8 to Figure 14 , Figure 8 to Figure 14 It is a schematic diagram of the manufacturing process of the thin film transistor of the present invention. For illustrative purposes, Figure 8 to Figure 14 Only the process for thin film transistors is shown. Such as Figure 8As shown, firstly a transparent substrate 50 is provided, wherein the transparent substrate 50 can be a glass substrate, a quartz substrate or a plastic substrate. Next, four thin film layers 62 are continuously formed on the surface of the transparent substrate 50 , including the first conductive layer 52 , the first insulating layer 54 , the semiconductor layer 56 and the sacrificial layer 60 containing metal. The material of the first conductive layer 52 may include aluminum, molybdenum (molybdenum, Mo), chromium (chromium, Cr), tungsten, tantalum (tantalum, Ta), copper or alloys of the above metals. The first insulating layer 54 can be a silicon nitride layer or a silicon o...

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Abstract

This invention provides a manufacturing method for film transistors, which first of all forms four film layers containing a first conduction layer, a first insulation layer, a semiconductor layer and a sacrifice layer with metals, then etches to patternize the film layers to drive the first conduction layer to form a grid electrode, then to form a second insulation layer on the surface of the base plate and strips off the sacrifice layer and removes the sacrifice layer and the second insulation layer, then, forms a second conduction layer on the surface of the base plate, finally, patternizes the second conduction layer to form a source and a drain on the semiconductor layer.

Description

technical field [0001] The invention relates to a method for manufacturing a thin film transistor, in particular to a method for manufacturing a thin film transistor by using a stripping process. Background technique [0002] With the development of science and technology, flat panel displays have been widely used in various information products, among which the development of thin film transistor (TFT) liquid crystal display (TFT-LCD) is the most mature, because of its light and thin appearance, power consumption Due to the characteristics of small amount and no radiation pollution, it is widely used in portable information products such as notebook computers (notebooks) and personal digital assistants (PDAs), and has even gradually replaced traditional cathode ray tube displays. TFT-LCD mainly uses thin-film transistors arranged in an array to drive liquid crystal pixels with appropriate capacitors, connection pads and other electronic components to produce rich and bright...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
Inventor 林汉涂
Owner AU OPTRONICS CORP