Electrode antenna integrated photoelectric integrated sensor for testing strong electric field

A photoelectric integration and sensor technology, applied in electrostatic field measurement, current/voltage measurement, electric variable measurement, etc., can solve the problem that strong electric field sensors cannot fully meet the requirements of strong electric field measurement, and improve the measurement frequency range and response speed , Fast response speed and strong position resolution ability

Inactive Publication Date: 2006-11-15
TSINGHUA UNIV
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Problems solved by technology

[0004] Therefore, the existing strong electric field sensors cannot fully meet the requirements of strong electric field measurement

Method used

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  • Electrode antenna integrated photoelectric integrated sensor for testing strong electric field
  • Electrode antenna integrated photoelectric integrated sensor for testing strong electric field
  • Electrode antenna integrated photoelectric integrated sensor for testing strong electric field

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Embodiment Construction

[0019] The electrode-antenna integrated photoelectric integrated sensor for strong electric field measurement proposed by the present invention has a structure such as figure 2 As shown, a chip 5 with electro-optic effect is adopted, and optical waveguides 6 with Y-shaped bifurcations at both ends and parallel to each other in the middle are formed on the surface of the chip 5 by titanium metal diffusion method or proton exchange method, and two sections of optical waveguides parallel to each other are arranged on Three gate-shaped electrode antennas 7 with protrusions on the top, and the three gate-shaped electrode antennas 7 are parallel to each other and straddle two sections of optical waveguides that are parallel to each other.

[0020] The wafer 5 in the photoelectric integrated sensor mentioned above can be any one of lithium niobate wafer, bismuth silicate wafer, bismuth germanate wafer or potassium titanyl phosphate wafer.

[0021] The width of the electrode antenna ...

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Abstract

The present invention relates to an electrode antenna unified photoelectric integrated sensor used for making strong electric field measurement, belonging to the field of high-voltage measurement technology. It is characterized by that it adopts a wafer with electro-optic effect, on the wafer surface said invention adopts titanium metal diffusion process or proton exchange process to form optical waveguides whose two ends are made into the form of Y-shaped bifurcation and middles are mutually parallel, on two mutually-parallel optical waveguides three inverted U-shaped electrode antennas whose tops are respectively equipped with a projection are set, said three mutually-parallel inverted U-shaped electrode antennas are crossed over two mutually-parallel optical waveguides. The invented photoelectric integrated sensor can be used for measuring the information of amplitude, frequency and phase of strong electric field signal.

Description

technical field [0001] The invention relates to an electrode-antenna integrated photoelectric integrated sensor for strong electric field measurement, which is especially suitable for sensor isolation and strong electric field signal measurement under the condition of high electric field amplitude, and belongs to the technical field of high voltage measurement. Background technique [0002] In high voltage or electromagnetic pulse environments, very strong electric fields can be generated. The key component to measure it is the electric field sensor. The sensor must not only be able to withstand strong electric field environments, but also be able to measure strong electromagnetic fields with high amplitudes. [0003] In the field of traditional high-voltage measurement, sensors based on the principle of electromagnetic induction are generally used for electric field measurement. The strong electric field sensor based on the principle of electromagnetic induction has the f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/12G01R19/00
Inventor 曾嵘何金良陈未远梁文烈
Owner TSINGHUA UNIV
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