Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for growing high-performance tube type sapphire

A sapphire, high-performance technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of low yield, poor quality effect of finished products, complicated processes, etc., to achieve good crystal integrity, convenient processing, process simple effect

Inactive Publication Date: 2006-12-27
天津市硅酸盐研究所有限公司
View PDF3 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Adopt above-mentioned disclosed method when processing, procedure is more complicated, yield rate is low, finished product quality effect is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] The present invention will be further described in detail below in conjunction with specific embodiments: a method for growing high-performance tubular sapphire, which adopts a one-time forming wet guide method technology to directly draw the desired inner and outer diameters and lengths from the melt. Tubular sapphire, first determine the size of the tubular sapphire, in order to ensure the growth of high-quality tubular sapphire crystals, it is necessary to design and process a long tube mold that matches the appearance shape and size of the required crystal, and then select high-purity flame-fused sapphire Scraps are used as raw materials, high-quality seed crystals in the direction grown by the pulling method are selected, and long tube molds are used to grow tubular sapphires, and reasonable temperature field conditions for crystal growth are established to achieve uniform lateral temperature fields and lateral temperature differences. Within 2°C, the longitudinal ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention exposed the method of producing high performance cannular sapphire. It uses once-fashioning wetting EFG technology. It draws the cannular sapphire with required inner diameter and outer diameter and length from melt. Firstly, the size and specification of cannular sapphire need to be determined, then according to it to produce the matching cannular die. Then selecting sapphire particleboard from flame fusion method as raw material, and secelting the good seeding grew in (0001) direction by Czochralski method to grow cannular sapphire. The transverse temperature difference is within 2DEG C, the lognitudinal temperature grads within 10mm of die end face is 3-4DEG C, the growth speed is 30-40mm / h. This method can get cannular sapphire with desired inner diameter and outer diameter and length, and avoid difficulty and waste of processing the clubbed crystal. It can be used in semiconductor, chemistry, aviation, spaceflight, national defence and other high-tech sectors.

Description

technical field [0001] The invention relates to a gemstone growth method, in particular to a method for growing high-performance tubular sapphire. Background technique [0002] High-performance tubular sapphire has the characteristics of regular appearance, smooth surface, good transparency, and good crystal integrity. Due to the high melting point, high hardness, corrosion resistance, and good infrared transmittance of the sapphire crystal itself, it has a series of excellent properties. Performance, such products can be used in high-tech fields such as semiconductors, chemicals, aviation, aerospace, national defense and other industries. The method of growing gemstones directly from the melt is carried out according to the method of H.E.LaBelle, Jr. in the United States, which is called the wetting-guided mode method, or EFG method. US Patent 3591348 discloses a method for growing white gemstones, Chinese Patent 85103282.6 discloses a method and device for growing rod-sha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B15/34C30B29/20C30B29/66
Inventor 滑芬张莲花王晶秦承安张贵芹
Owner 天津市硅酸盐研究所有限公司
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com