Method for growing high-performance tube type sapphire

A sapphire, high-performance technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of low yield, poor quality effect of finished products, complicated processes, etc., to achieve good crystal integrity, convenient processing, process simple effect

Inactive Publication Date: 2006-12-27
天津市硅酸盐研究所有限公司
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Adopt above-mentioned disclosed method when processing, procedure is mor

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[0008] The present invention will be further described in detail below in conjunction with specific embodiments: a method for growing high-performance tubular sapphire, which adopts a one-time forming wet guide method technology to directly draw the desired inner and outer diameters and lengths from the melt. Tubular sapphire, first determine the size of the tubular sapphire, in order to ensure the growth of high-quality tubular sapphire crystals, it is necessary to design and process a long tube mold that matches the appearance shape and size of the required crystal, and then select high-purity flame-fused sapphire Scraps are used as raw materials, high-quality seed crystals in the direction grown by the pulling method are selected, and long tube molds are used to grow tubular sapphires, and reasonable temperature field conditions for crystal growth are established to achieve uniform lateral temperature fields and lateral temperature differences. Within 2°C, the longitudinal ...

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Abstract

This invention exposed the method of producing high performance cannular sapphire. It uses once-fashioning wetting EFG technology. It draws the cannular sapphire with required inner diameter and outer diameter and length from melt. Firstly, the size and specification of cannular sapphire need to be determined, then according to it to produce the matching cannular die. Then selecting sapphire particleboard from flame fusion method as raw material, and secelting the good seeding grew in (0001) direction by Czochralski method to grow cannular sapphire. The transverse temperature difference is within 2DEG C, the lognitudinal temperature grads within 10mm of die end face is 3-4DEG C, the growth speed is 30-40mm/h. This method can get cannular sapphire with desired inner diameter and outer diameter and length, and avoid difficulty and waste of processing the clubbed crystal. It can be used in semiconductor, chemistry, aviation, spaceflight, national defence and other high-tech sectors.

Description

technical field [0001] The invention relates to a gemstone growth method, in particular to a method for growing high-performance tubular sapphire. Background technique [0002] High-performance tubular sapphire has the characteristics of regular appearance, smooth surface, good transparency, and good crystal integrity. Due to the high melting point, high hardness, corrosion resistance, and good infrared transmittance of the sapphire crystal itself, it has a series of excellent properties. Performance, such products can be used in high-tech fields such as semiconductors, chemicals, aviation, aerospace, national defense and other industries. The method of growing gemstones directly from the melt is carried out according to the method of H.E.LaBelle, Jr. in the United States, which is called the wetting-guided mode method, or EFG method. US Patent 3591348 discloses a method for growing white gemstones, Chinese Patent 85103282.6 discloses a method and device for growing rod-sha...

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Application Information

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IPC IPC(8): C30B15/34C30B29/20C30B29/66
Inventor 滑芬张莲花王晶秦承安张贵芹
Owner 天津市硅酸盐研究所有限公司
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