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Ferroelectric film electric hysteresis loop measuring compensating method

A ferroelectric thin film and hysteresis loop technology, applied in the field of thin film testing and measurement, can solve the problems of requiring human intervention, long test time, and low measurement accuracy.

Inactive Publication Date: 2007-01-03
DALIAN UNIV OF TECH
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  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to quickly and accurately measure the hysteresis loops of ferroelectric thin films and piezoelectric thin film materials, provide a fast hysteresis loop software compensation method, and solve the problem of human intervention in the measurement process, long test time, and poor measurement accuracy. high problem

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  • Ferroelectric film electric hysteresis loop measuring compensating method
  • Ferroelectric film electric hysteresis loop measuring compensating method
  • Ferroelectric film electric hysteresis loop measuring compensating method

Examples

Experimental program
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Embodiment 1

[0054] Computer 4 is a general-purpose microcomputer, and the data acquisition card is PCI-6221 of NI Instrument Company. The test sample is a 24-layer PZT piezoelectric film prepared by the sol-gel method, the thickness of the sample is 880nm, and the electrode area is 0.5mm 2 . Sine wave U i The frequency is f=100Hz (ie w=628rad / s), and the amplitude A=9V. A of the high-voltage amplifier module 6 2 Using Apex's PA08, V DD =80V, magnification k=R 2 / R 1 =4, that is, the excitation voltage range is -36V~36V. V of the modified Sawyer-Tower circuit 3 CC =12V,A 2 Using Burr-Brown's very low bias operational amplifier OPA129U, the output voltage U o Collected by the A / D channel of the data acquisition card 5 to the computer 4. Computer 4 processes the data and calculates the linear capacitance C x and leakage resistance R x , display the hysteresis loop curve, and output the remanent polarization P r and the coercive field E c the size of. The entire measurement pro...

Embodiment 2

[0056] The test sample is a 24-layer PZT piezoelectric film with a thickness of 800nm ​​and an electrode size of 0.260mm×1.28mm. Sine wave U i The frequency is f=100Hz, the amplitude A=6V. The hysteresis loop measurement and compensation process is the same as that in Embodiment 1. By calculation, PZT film leakage resistance R x =12.519MW, linear capacitance C x =1.006nf, the leakage resistance value coincides with the 12.5182MW obtained according to the method of patent CN 86107714. The specific running time of the compensation algorithm depends on the computer. Running on the same computer, the running time of the algorithm proposed by the invention is shortened to 2% of the method of the patent CN 86107714. Table 1 shows the remanent polarization P before and after compensation r and the coercive electric field E c contrast. It can be seen that the remnant polarization intensity after compensation is smaller than that before compensation, while the coercive electric ...

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Abstract

The test and compensate method about hysteresis loop of ferroelectric thin films and piezoelectric film belongs to film test and measure technology field. The hysteresis loop test and compensate system is made up of computer, data collection card, high voltage magnifying model and improved active Sawyer-Tower circuit. Directly calculate the leakage resistance and linearity capacitance according to the infection of the hysteresis loop from the leakage resistance and linearity capacitance about the odd symmetry and couple symmetry at the inspirit voltage positive peak value time. The emendation intrinsic hysteresis loop displays and memories by computer. The voltage of the two ending of the ferroelectric thin films is equal to inspirit voltage without the infection by sampling capacitance. Calculate the leakage resistance and linearity capacitance according to the most inspirit voltage and the import and export sampling data of two closed points without test in advance or estimate. It can eliminate the man-made factor influence to enhance the test precision and speed of the hysteresis loop to ferroelectric thin films.

Description

technical field [0001] The invention belongs to the technical field of thin film testing and measurement, and relates to a measuring method and a compensation method for hysteresis loops of ferroelectric thin films and piezoelectric thin films. Background technique [0002] In recent years, thin film materials have become one of the research hotspots in the field of materials and information. For example, piezoelectric thin films can be used to make micro-electromechanical (MEMS) sensors and actuators, and ferroelectric thin films can be used to make non-volatile memories. Piezoelectric thin films and ferroelectric thin films are thin-film ferroelectrics, and both have ferroelectricity. One of their important characteristics and important criteria is the hysteresis loop. The hysteresis loop is the relationship curve between the electric polarization P and the electric field E in the ferroelectric. The conventional method for measuring the hysteresis loop is figure 1 In the...

Claims

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Application Information

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IPC IPC(8): G01R31/00
Inventor 董维杰崔岩王兢白凤仙
Owner DALIAN UNIV OF TECH
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