Chemical and mechanical polishing liquid

Abstract

The present invention discloses a kind of chemical and mechanical polishing fluid, which includes at least one kind of grinding grain, one kind of chemical additive and one kind of carrier, where the chemical additive is polycarboxylic acid and/or its salt. The chemical and mechanical polishing fluid can raise the flatness of the polished metal surface, lower the metal polishing rate obviously, optimize the dielectric polishing rate and expand technological parameter window.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid. Background technique [0002] With the development of microelectronics technology, the integration level of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires nearly a hundred processes in the microelectronics process, especially multi-layer wiring, lining The bottom and medium must be chemically mechanically globally planarized, and chemical mechanical polishing (CMP) has been proven to be the best planarization method. [0003] In chemical mechanical polishing methods, the polished surface of a substrate is brought into direct contact with a rotating polishing pad while pressure is applied to the backside of the substrate. During polishing, the polishing pad rotates with the operating table while maintaining a downward force on the back of the substrate, and a liquid composed of abrasives and...

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Problems solved by technology

[0004] In typical chemical mechanical polishing of metals, defect levels are often high, especially if pitting, edge erosion, corrosion, etc. are present

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