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High pressure transistor simulation model

A high-voltage transistor, simulation model technology, applied in special data processing applications, instruments, electrical digital data processing and other directions, can solve the problems of simulation value distortion, inability to simulate the performance and loss of high-voltage transistor devices well, and improve efficiency and efficiency. Accuracy, shorten the product design cycle, reduce the effect of cost

Active Publication Date: 2007-02-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Application Information

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Problems solved by technology

In the prior art, the BSIM3 model can well simulate the performance of the transistor in the low-voltage part, but when the gate voltage is greater than 20 volts, it cannot simulate the gate voltage to I ds The phenomenon of weakening control force, the simulation value is obviously distorted
[0005] The traditional BSIM3 model, which has been widely used on ordinary transistors, cannot simulate the performance of high-voltage transistor devices well
In particular, the performance of high-voltage transistor devices under high voltage cannot be well simulated, which has caused great inconvenience and heavy losses to the design of high-voltage integrated circuits

Method used

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Embodiment Construction

[0017] A high-voltage transistor simulation model of the present invention includes a common SPICE device model of a high-voltage transistor under low-voltage conditions. The SPICE transistor simulation model can be a BSIM3 general model, and a variable resistor is connected in series on the drain and source of the transistor. ,Such as image 3 shown. The relationship between variable resistance and voltage, temperature, and transistor width is: R=R 0 ×(1+V C1 ×V R +V C2 ×V R ×V R ))×(1+T C1 ×(T-Tnom)+T C2 ×(T-Tnom)×(T-Tnom)) / W, where R 0 is the resistance value at zero voltage, V C1 , V C2 is the resistance R 0 The primary and secondary coefficients of the voltage, V R is added across the resistor R 0 The absolute value of the voltage above, T C1 ,T C2 is the first-order and second-order temperature coefficient of the resistance, T is the system temperature, Tnom is the room temperature, and W is the width of the transistor. When the drain and source structure...

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Abstract

This invention discloses a simulation model of a high pressure transistor including an ordinary SPICE transistor simulation model, in which, a variable resistor is serial to the source and drain of the transistor and the performance under high pressure of the high pressure transistor apparatus is very well simulated to increase the efficiency and accuracy of the design of IC, shorten the design period and reduce the cost.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a high-voltage transistor simulation model. Background technique [0002] The device simulation model plays a very important role in integrated circuit design. It can greatly shorten the design and production cycle of products, improve the yield of products, save costs and so on. At present, high-voltage devices are more and more widely used in integrated circuit products, such as liquid crystal display drivers (LCD Driver), etc. However, there is currently a lack of efficient and concise high-voltage device models, and there is no recognized unified standard. [0003] There is a big difference between the performance of high-voltage transistor devices and ordinary transistor devices, mainly in that when the drain works at the saturation voltage (V dd ), as the gate voltage (V gs ) increases when V gs close to V dd When, the transistor current (I ds ) increases obviously s...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 邹小卫刘忠来
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP