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AlGaN base resonant reinforced one-color UV detector structure and growing method

A UV detector, monochromatic technology, applied in semiconductor devices, sustainable manufacturing/processing, electrical components, etc., can solve problems such as inability to meet and restrict the development of UV detection technology, and achieve the effect of strong absorption

Inactive Publication Date: 2007-02-14
NANJING UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Conventional AlGaN ultraviolet photodetectors cannot simultaneously have high quantum efficiency, appropriate bandwidth, fast response speed, and insensitivity to light other than the working wavelength. Requirements, to a certain extent, restrict the development of ultraviolet detection technology

Method used

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  • AlGaN base resonant reinforced one-color UV detector structure and growing method
  • AlGaN base resonant reinforced one-color UV detector structure and growing method
  • AlGaN base resonant reinforced one-color UV detector structure and growing method

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Embodiment Construction

[0020] The invention calculates and designs the structure of the AlGaN / AlN low-band (wavelength less than 360nm) ultraviolet detector according to the analysis model method of the quantum efficiency of the RCE detector, and determines the material structure of the ultraviolet detector. Device structure model see figure 1 shown. According to this model, the relationship between device quantum efficiency and material structure can be given as follows.

[0021] η = { ( 1 + R 2 e - ad ) 1 - 2 R 1 R 2 e - ...

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Abstract

This invention relates to an AlGaN base resonance enhanced monocolor ultraviolet detector structure including: setting low and high temperature GaN materials with the thickness of 50-2000nm on a sapphire substrate, setting AlN / AlGaN multilayer structured distributed Bragg reflectors of 15-80nm and 15-100nm of 5-50 periods on the GaN material as the base lenses, setting a resonance cavity of n-AlxGal-xN / i-GaN / p-AlxGl-xN structure on the lenses, namely, setting high temperature absorption layers of n-AlzGal-xN and i-GaN of 20-80nm and 5-30nm thick and a resonator of 20-80nm thick and high temperature p-AlxGal-xN, Al composition and x is greater than or equal to 0.3, finally finishing RCE ultraviolet detector structure by a reflector, a top lens of AlN / AlGaN multi-layer structure distributed Bragg structure reflectors in the thickness of 15-89nm and 15-100nm from 0-30 periods.

Description

technical field [0001] The invention relates to a structure and growth method of an AlGaN-based resonance enhanced monochromatic ultraviolet detector, especially a new type that can be used in the fields of aviation, aerospace, tracking and control, missile guidance and early warning, medical and health and biological engineering, environmental monitoring and forecasting, etc. AlN / Al x Ga 1-x The material structure and growth method of N-based resonance enhancement (RCE) ultraviolet ray detector. Background technique [0002] AlGaN-based ultraviolet detectors are one of the hot issues in the research of group III nitrides in the world in recent years. application prospects. In order to enhance the quantum efficiency of the UV detector, two parallel distributed Bragg reflectors ( D distributed B ragg R eflectors) form a Fabry-Perot resonant cavity, an active-layer is designed in the resonant cavity, and a resonant cavity-enhanced ultravio...

Claims

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Application Information

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IPC IPC(8): H01L31/105H01L31/18
CPCY02P70/50
Inventor 谢自力江若琏张荣韩平修向前刘斌李亮赵红郑有炓顾书林施毅朱顺明胡立群
Owner NANJING UNIV
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