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Antireflective hard mask compositions

An anti-reflection and composition technology, which is applied to photosensitive materials, instruments, and patterned surface photoengraving processes for optomechanical equipment, etc., can solve the problem of limited image resolution, limited resolution, uneven photoresist Agent line width and other issues

Inactive Publication Date: 2012-02-15
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In practice, other issues in circuit fabrication limit the resolution and ability to form smaller parts
For example, reflection of the activating radiation used to expose the photoresist can limit the resolution of the image formed in the resist
Specifically, reflection of radiation from the underlying surface / photoresist interface can create spatial variations in the intensity of radiation in the photoresist, resulting in non-uniform photoresist linewidths during development

Method used

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  • Antireflective hard mask compositions
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  • Antireflective hard mask compositions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-6

[0119] Examples 1-6: Synthesis of chromophore components

Embodiment 1

[0120] Embodiment 1: synthetic chromophore resin

[0121]

[0122] STY: HEMA structure

[0123] To a 500 mL 3-necked round bottom flask equipped with a condenser, thermometer, magnetic stirrer and externally heated oil bath was charged the following: Styrene (STY) (38.20 g, 0.367 mmol), 2-Hydroxyethyl methacrylate (HEMA) (31.81 g, 0.244 mmol). Propylene glycol monomethyl ether acetate (PGMEA) (190 mL) was added, and the resulting solution was heated to 100°C. Once at reflux, a 10% by weight solution of the initiator 2,2'-azabis-2-methylbutyronitrile (AMBN) (9.4 g, 0.049 mmol) in PGMEA was added. The solution was maintained at 100°C for 90 minutes. Further initiator solution (10% by weight) (2.55 g, 0.012 mmol) was then added to the flask. The solution was maintained at 100°C for an additional 6.5 hours and then cooled to room temperature. About 370 g of polymer was obtained as a solution of about 19% by weight solids in PGMEA. The polymers produced are also described ...

Embodiment 2-6

[0124] Examples 2-6: Synthesis of other chromophore polymers

[0125] It was synthesized by the same method as Example 1, but the amount of monomer added, reaction time (longer reaction time provides high molecular weight), etc. were appropriately modified. Five other polymers were prepared (these five polymers were the polymers of Examples 2-6, respectively). The properties of those polymers of Examples 2-6 are listed in Table 1 below.

[0126] Table 1: Polymer Properties

[0127] Example polymer description Target composition (mol%) mw PD 1 STY / HEMA 60 / 40 3260 1.71 2 STY / HEMA 60 / 40 9602 2.17 3 STY / HEMA 90 / 10 3620 1.84 4 STY / HEMA 80 / 20 3631 1.77 5 STY / HEMA 60 / 40 3314 1.72 6 STY / HEMA 60 / 40 5265 1.89

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Abstract

The invention includes new organic-containing compositions that can function as an antireflective layer for an overcoated photoresist. Compositions of the invention also can serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectivity from an undercoated layer. Preferred compositions of the invention have a high Si content and comprise a blend of distinct resins.

Description

technical field [0001] The present invention includes novel organic material-containing compositions useful as antireflective layers in overcoated photoresists. The compositions of the present invention are also effective as hardmask layers by exhibiting sufficient plasma etch selectivity to undercoat layers. Preferred compositions of the invention have a high Si content and contain a blend of different resins. Background technique [0002] In the fabrication of semiconductor devices, various conductive device regions and layers are formed on a device substrate, often separated by electrically insulating regions, which may be inorganic or organic dielectric materials. For example, the inorganic dielectric region can be formed from silicon dioxide and can be produced by various techniques such as oxide growth, sputtering, or other chemical deposition methods. In the manufacture of devices, openings need to be made in the dielectric layer to allow contact and electrical conn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/09
CPCH01L21/0276G03F7/11H01L21/3081G03F7/0757G03F7/0752G03F7/091
Inventor D·A·格伦拜克A·M·夸克C·Q·特鲁翁M·K·加拉赫A·赞皮尼
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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