Self-rotary valve electromagnetic resistor based on hard magnetic material and its production

A technology of hard magnetic materials and magnetoresistance, which is applied in the manufacture/processing of magnetic field-controlled resistors and electromagnetic devices, which can solve problems such as the decline in thermal stability of magnetoresistance devices, achieve improved thermal stability, and increase the reversal field Effect

Inactive Publication Date: 2007-04-04
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the problem that the magnetoresistance device with the spin valve structure composed of the existing Mn-based antiferromagnet needs to be annealed at a specific temperature, and the thermal stability of the magnetoresistance device will decrease due to the thermal diffusion of Mn atoms. defects, thereby providing a magnetoresistive device with high thermal stability based on a spin valve structure pinned by hard magnetic materials, without the thermal diffusion of Mn, and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Using the conventional magnetron sputtering method, on a substrate Si with a thickness of 1mm, the vacuum degree is better than 10 -5 Pa, set the substrate temperature to room temperature, deposit a buffer layer Ru with a thickness of 45nm, then set the substrate temperature to 500°C, induce a magnetic field of 500Oe, and deposit a hard magnetic layer Co with a thickness of 8nm 30 Pt 70 . The easy axis direction of the hard magnetic layer is determined according to the method described in technical solution step 3), that is, the substrate on which the hard magnetic layer is deposited is taken out from the vacuum coating equipment, and the direction of the sample relative to the VSM scanning magnetic field is changed, from Pick out the best remanence ratio in the M-H curve, and its corresponding sample easy axis is collinear with the VSM scanning magnetic field direction and is marked on the substrate to provide a reference for the following steps; the easy axis directi...

Embodiment 2～4

[0056] According to the method of embodiment 1, sputter growth buffer layer, hard magnetic layer, first soft magnetic layer, non-magnetic metal conductive layer or insulating layer, second soft magnetic layer and covering layer on the substrate of 1nm successively, wherein hard The magnetic material selects Co with a Co composition of 0.3x Pt 1-x alloy, the composition of the spin valve magnetoresistive device based on the hard magnetic material is listed in Table 1. The direction of the easy axis of the hard magnetic layer is determined according to the method in the embodiment, specifically along the direction of the induced magnetic field.

[0057] Reality

[0058] The spin valve magnetoresistive devices prepared in Examples 2-4 work in the same manner as in Example 1.

Embodiment 5～8

[0060] According to the method of embodiment 1, on the substrate of 1nm, vacuum degree is better than 10 -5 Pa, the size of the induced magnetic field is 400Oe, and the growth buffer layer, hard magnetic layer, first soft magnetic layer, non-magnetic metal conductive layer or insulating layer, second soft magnetic layer and covering layer are sputtered in sequence, and the hard magnetic material is selected as Fe composition 0.3 Fe x Pt 1-x alloy, the composition of the spin valve magnetoresistive device based on the hard magnetic material is listed in Table 2. The direction of the easy axis of the hard magnetic layer is determined according to the method in Embodiment 1, specifically along the direction of the induced magnetic field.

[0061] Reality

[0062] The spin valve magnetoresistive devices prepared in Examples 5-8 work in the same manner as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention is concerned with spin valve magnetoresistance device using for hard magnetism material. It relates to an underlay and its cushion layer, and there are hard magnetism layer, the first soft magnetism layer, non-magnetism metal conducting layer or insulated layer, the second soft magnetism layer and cover layer. The hard magnetism layer is made up of ferromagnetic material with high remanence and big coercive force. The soft magnetism layer is made up of ferromagnetic material with high spin polarization ratio and small coercive force. This device relates to ferromagnetic/antiferromagnetic coupling layer between the hard magnetism layer and the first soft magnetism layer. The said hard magnetism layer is complex hard magnetism layer, while the second soft magnetism layer is complex soft magnetism layer. This device is made up by vacuum plating method to form the said layer on the monocrystal underlay in turn. It owns high stability of heat without the thermal diffusion of Mn, and is fit for giant magnetoresistance device and tunnelling magnetoresistance device.

Description

technical field [0001] The invention relates to a magnetoresistance device with a spin valve structure, in particular to a magnetoresistance device with a spin valve structure based on pinning a soft magnetic material with a hard magnetic material, and a preparation method thereof. Background technique [0002] Since Baibich et al. discovered the giant magnetoresistance effect (GMR) in Fe / Cr multilayer films in 1988, this effect has been extensively and intensively studied. In 1991, Dieny proposed a giant magnetoresistive device with a spin valve structure. Its core structure includes four layers, from bottom to top: an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic metal isolation layer and a second iron layer. magnetosphere. This structure has been successfully applied in computer magnetic read heads and magnetic sensors due to its large magnetoresistance ratio and small switching field. In 1995, T. Miyazaki and J.S. Moodera independently obtained TM...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12
Inventor 杜关祥韩秀峰姜丽仙赵静詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap