Method for preparing LED electrode

A technology for manufacturing light-emitting diodes and electrodes, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of wire plate falling off, etc., and achieve the effect of firm adhesion

Inactive Publication Date: 2007-04-11
DAUAN LUMEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even with the above measures, the phenomenon of P bonding disc falling off occurs from time to time

Method used

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  • Method for preparing LED electrode
  • Method for preparing LED electrode
  • Method for preparing LED electrode

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Embodiment 1

[0025] An electrode structure and manufacturing method of a gallium nitride light-emitting diode chip includes the following processes, and the structure refers to FIG. 2:

[0026] 1. Grow N-type gallium nitride (202) and P-type gallium nitride (203) on a sapphire substrate (201), and then vapor-deposit Ni / The Au metal layer (204), with a thickness of 50-500 Ȧ, is then annealed in an air environment at a temperature of 250-700° C. for 10-40 minutes to form a transparent P-type ohmic contact layer; and then evaporated by an electron beam Method A Ti / Ni / Al metal layer (205) is vapor-deposited on the N+ layer of the gallium nitride epitaxial wafer with a thickness of 100-5000 Ȧ to form an N-type ohmic contact layer.

[0027] 2. Use photolithography and wet etching to remove part of the ohmic contact electrode layer at the position where the P bonding pad is prepared, exposing the P-type gallium nitride epitaxial layer, whose size is smaller than the size of the P bonding pad.

...

Embodiment 2

[0035] An electrode structure and manufacturing method of a gallium nitride light-emitting diode chip includes the following processes, and the structure refers to FIG. 4:

[0036] 1. Grow N-type gallium nitride (202) and P-type gallium nitride (203) on a sapphire substrate (201), and then vapor-deposit Ni / The Au metal layer (204), with a thickness of 50-500 Ȧ, is then annealed in an air environment at a temperature of 250-700° C. for 10-40 minutes to form a transparent P-type ohmic contact layer; and then evaporated by an electron beam Method A Ti / Ni / Al metal layer (205) is vapor-deposited on the N+ layer of the gallium nitride epitaxial wafer with a thickness of 100-5000 Ȧ to form an N-type ohmic contact layer.

[0037] 2. Use photolithography and wet etching to remove part of the ohmic contact electrode layer at the position where the P bonding pad is prepared, exposing the P-type gallium nitride epitaxial layer, whose size is smaller than the size of the P bonding pad.

[...

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PUM

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Abstract

This invention relates to a preparation method for preparing LED chips including: 1, adding an adhered layer of strong adhesion between an ordinary wire winding disk and a semiconductor illumination structure to avoid the disk to be divorced, 2, roughing the surface of the disk to increase the connecting strength of the disk and outside weld lines.

Description

technical field [0001] The invention relates to a method for manufacturing a light-emitting diode chip, in particular to a method for preparing electrodes of the chip. Background technique [0002] Light-emitting diode (LED) is a light-emitting device that converts electrical energy into light energy. It is widely used in indication, display, decoration, lighting and many other fields, and has become an indispensable part of our life. The light-emitting diodes used in the above applications are packaged by light-emitting diode chips to realize their application functions. The core of a light emitting diode device is a light emitting diode chip. During the packaging process, the light-emitting diode chip becomes an easy-to-use device through optical, mechanical, thermal and electrical design, and this device can be used more reasonably and effectively for application needs. The invention relates to the manufacturing technology of light-emitting dio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/28H01L33/38H01L33/40
Inventor 何晓光武胜利柯志杰郑远志韩晓翠
Owner DAUAN LUMEI OPTOELECTRONICS
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