System and method for photolithography in semiconductor manufacturing

Abstract

The present invention is relates to a method for photolithography in semiconductor manufacturing which includes providing a substrate for a wafer and providing a mask for exposing the wafer. The wafer is exposed by utilizing a combination of high angle illumination and focus drift exposure methods. The photolithography using the method of conforming high-angle illumination and a method of focus drift exposure, can reduce the proximity effect and increase the focus depth.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor element, in particular to a photolithography process applied in semiconductor manufacturing. Background technique [0002] When the semiconductor industry began to develop, photolithography was used to form components in integrated circuits. The density of components that can be placed on a single wafer also continues to increase due to the continuous advancement of photolithography technology, especially the decreasing wavelength of exposure radiation. As long as the critical dimensions of the circuit elements are larger than the wavelength of radiation used to expose the photoresist, the technology does not require any significant changes in the characteristics of the reticle. [0003] However, when the imaged radiation wavelength is larger than the critical dimension, the diffraction effect that has always existed becomes very obvious at this time, resulting in severe disto...

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