Nitride semiconductor laser device and method of manufacturing the same

Abstract

A semiconductor laser device is provided. The semiconductor laser device includes a substrate, and an n-material layer, an n-clad layer, an n-light waveguide layer, an active region, a nitride semiconductor layer, a metal layer and a metal-based clad layer sequentially formed on the substrate. The metal layer and the metal-based clad layer have a ridge shape and a current blocking layer is formed on sidewalls of the metal layer and the metal-based clad layer and an exposed surface of the nitride semiconductor layer. A p-electrode layer is formed on the ridge shaped metal layer and the current blocking layer. The semiconductor laser device uses the metal-based clad layer instead of AlxInyGa1-x-yN-based p-clad layer, thus preventing degradation of the active region. The semiconductor laser device also includes the thin metal layer between the metal-based clad layer and a p-GaN material of the nitride semiconductor layer, thus reducing contact resistance therebetween. Thus, it is possible to fabricate a high power, low voltage semiconductor laser device having a visible light wavelength.

Description

technical field [0001] The present invention relates to a semiconductor laser device and a manufacturing method of the semiconductor laser device, more specifically, to a semiconductor laser device that uses a metal contact layer and a conductive metal-based material as a cladding layer to replace an AlGaN-based material and a manufacturing method thereof . Background technique [0002] Semiconductor laser devices utilizing GaN stand out not only as promising light sources for optical systems for recording and / or reproducing high-density optical information recording media, but are also attracting attention as new blue and green laser light sources in the field of laser displays , wherein the high-density optical information recording medium is, for example, Blu-ray Disc (BD) or High-Definition Digital Versatile Disc (HD-DVD). [0003] FIG. 1 is a cross-sectional view of a typical semiconductor laser diode. Referring to FIG. 1, a typical semiconductor laser diode (LD) incl...

AI Technical Summary

Problems solved by technology

Degradation or segregation becomes more severe for LDs at visible wavelengths with larger amounts of In and lower active layer growth temperatures

In addition, due to the large amount of Al or the large thickness of the cladding layer 70, the active layer 50 is prone to strain or rupture, thereby increasing the magnitude of the driving voltage

Images